Aluminum Nitride On Diamond

Data sheet

Molecular Formula	AlN

More info

Aluminum Nitride On Diamond combines the ultra-high thermal conductivity of diamond (up to 2000 W/m·K) with the excellent electronic properties of aluminum nitride. With a wide bandgap of 6.2 eV, high breakdown field strength, and outstanding thermal and chemical stability, it is well-suited for deep UV optoelectronics, high-frequency acoustic devices, and power electronics. The AlN growth surface maintains a roughness below Ra 2 nm (for a 200 nm AlN layer), ensuring smooth integration into advanced applications. Heeger Materials provides high-quality AlN On Diamond to support cutting-edge technological advancements.

Aluminum Nitride On Diamond Specifications

Substrate Material	200 μm ~ 500 μm; Polycrystalline Diamond
Diameter (inch)	2 inch (customizable)
AlN Epitaxial Thickness	50 nm - 1 μm
Crystal Orientation	c-axis [0001]
Surface Roughness (Ra)	<2 nm (5 × 5 μm area)
XRC (°) @ (0002)	<5° (200 nm thickness)
Total Thickness Variation (TTV)	<30 μm (2 inch)
Warp	<300 μm (2 inch; customizable)
Flatness (PV)	<15 fringe (Ø20 mm)

Aluminum Nitride On Diamond Key Advantages

Wide Bandgap (6.2 eV): Ideal for UV and deep UV light emission.
High Thermal Conductivity: Efficient heat dissipation.
Excellent Piezoelectric Properties: Optimal for sensors, actuators, and filters.
High Breakdown Field Strength: Suited for high-temperature, high-frequency, and high-power devices.
Low Dielectric Constant & Thermal Expansion: Minimizes stress and deformation.
GaN Compatibility: Perfect substrate for GaN-based devices.
Durability: High mechanical strength, chemical stability, and wear resistance.
CMOS-Compatible: Can integrate with other devices.
Superior Acoustic Properties: High-speed wave propagation for acoustic devices.

Aluminum Nitride On Diamond Characterization

AlN on Diamond (0002) XRD Rocking Curve AlN On Diamond AFM AlN on Diamond SEM

FWHM: Approximately 2.915°. (Ra): 1.74–2.84 nm Magnification: 50K

Aluminum Nitride On Diamond Applications

High-Power Electronics: Enhances heat dissipation and reliability in power semiconductor devices.
RF and Microwave Devices: Provides high thermal stability for high-frequency communication systems.
Deep UV Optoelectronics: Serves as a substrate for UV LEDs and laser diodes with excellent performance.
Acoustic Wave Devices: Ideal for SAW and BAW filters due to their high sound velocity and piezoelectric properties.
Thermal Management Solutions: Used in high-performance cooling applications for advanced electronic systems.

Aluminum Nitride On Diamond Packing And Shipping

Aluminum Nitride On Diamond will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Where to Buy Aluminum Nitride On Diamond in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Aluminum Nitride (AlN) Products including Aluminum Nitride On Diamond, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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