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Aluminum nitride (AlN) possesses excellent thermal conductivity, high electrical insulation, and thermal expansion properties similar to silicon. These characteristics make it suitable for use as a high thermal conductivity substrate in applications such as power transistor module substrates, laser diode mounting substrates, and IC packaging. Furthermore, its outstanding resistance to halogen gases enables its use as a component in semiconductor manufacturing equipment.
HM is a professional supplier and manufacturer of high-quality AlN products and leverages extensive expertise in supply and export to offer competitive prices.
Aluminum nitride (AlN) possesses excellent thermal conductivity, high electrical insulation, and thermal expansion properties similar to silicon. These characteristics make it suitable for use as a high thermal conductivity substrate in applications such as power transistor module substrates, laser diode mounting substrates, and IC packaging. Furthermore, its outstanding resistance to halogen gases enables its use as a component in semiconductor manufacturing equipment.
HM is a professional supplier and manufacturer of high-quality AlN products and leverages extensive expertise in supply and export to offer competitive prices.
Aluminum Scandium Nitride (AlScN) Film Template on Silicon offers superior piezoelectric properties and thermal stability, making it ideal for 5G RF filters and MEMS sensors. Heeger Materials (HM) delivers these high-quality products for advanced, high-frequency applications.