Name: Dysprosium Scandate Single Crystal Substrate | DyScO3 Crystal Substrate
Brand: Heeger Materials Inc
SKU: HM2918

Data sheet

Density	6.9 g/cm³
Melting Piont	2127 ℃
Molecular Formula	DyScO3

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Dysprosium Scandate (DyScO3) Single Crystal Substrate is widely used in the epitaxial growth of perovskite-structured thin films, providing outstanding lattice matching for high-performance oxide electronics. Its exceptional structural stability and low lattice mismatch make it a preferred substrate for high-k dielectrics, ferroelectric materials, and next-generation semiconductor devices. DyScO3 is also utilized in the development of advanced optoelectronic and quantum technologies, supporting applications in field-effect transistors, memory devices, and photonic systems. Heeger Materials provides high-quality DyScO3 Crystal Substrate to meet the needs of cutting-edge research and industrial advancements.

Dysprosium Scandate Single Crystal Substrate | DyScO3 Crystal Substrate

DyScO3 Crystal Substrate Properties

Specification note: Confirm DyScO3 formula, orientation, dimensions, thickness, polish side, roughness, miscut, edge treatment, quantity, packaging and documentation requirements.

Growth Method	Czochralski Method
Crystal Structure	Orthorhombic
Lattice Constants	a = 5.54 Å
	b = 5.71 Å
	c = 7.89 Å
Melting Point (℃)	2127
Density (g/cm³)	6.9

DyScO3 Crystal Substrate Specifications

Crystal Orientation	<001>, <110> ±0.5°
Dimensions	10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mm. Custom substrate sizes and orientations are available upon request.
Polishing	Single-side polished
Surface Roughness (Ra)	≤10Å

DyScO3 Crystal Substrate Applications

Epitaxial oxide and perovskite thin-film growth.
Ferroelectric, magnetic and multiferroic film research.
Lattice-match studies for advanced functional oxide devices.

Epitaxial Growth of Perovskite Thin Films: DyScO3 substrates provide excellent lattice matching, ensuring high-quality epitaxial layers for advanced oxide electronics.
High-k Dielectric and Ferroelectric Devices: Used in next-generation capacitors, memory devices, and tunable microwave components for improved electronic performance.
Semiconductor and Quantum Technologies: Supports the development of oxide-based semiconductors and quantum devices, including high-mobility transistors and quantum computing components.
Optoelectronic and Photonic Applications: Enables the fabrication of high-performance photonic devices, electro-optic modulators, and advanced laser components.
Strain Engineering in Functional Materials: Serves as a key substrate for strain-engineered thin films, enhancing properties in superconductors, multiferroics, and other functional materials.

DyScO3 Crystal Substrate Packing And Shipping

Packaging note: Substrates should be packed in clean carriers or separated containers to protect polished faces, edges and orientation labels.

Dysprosium Scandate (DyScO3) Single Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Dysprosium Scandate Single Crystal Substrate | DyScO3 Crystal Substrate Packing

Where to Buy Dysprosium Scandate (DyScO3) Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Magnetic and Ferroelectricity Thin Film Substrate products, including Dysprosium Scandate (DyScO3) Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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