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Silicon Dioxide (SiO2) Crystal is a...
HM2799
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Silicon Dioxide (SiO2) Crystal is a highly stable and transparent material known for its exceptional optical properties. With low thermal expansion and high hardness, it's widely used in optical and electronic applications, including lenses, windows, and sensor components. Heeger Materials (HM) provides high-quality SiO2 crystals for reliable performance in advanced technology systems.
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Density | 2.684g/cm3 |
Melting Piont | 1610℃ |
Molecular Formula | SiO2 |
Silicon Dioxide (SiO2) Crystal is a robust, optically transparent material with excellent mechanical properties. It's commonly used in precision optics, semiconductor applications, and as a substrate for various technologies. Silicon Dioxide (SiO2) is an important inorganic compound with high hardness, melting point, and chemical stability, making it ideal for use in glass, ceramics, electronics, and optics. HM provides high-quality SiO2 evaporation materials and SiO2 sputtering targets at competitive prices
Growth Method | Hydrothermal Method |
Crystal Structure | Hexagonal |
Lattice Constants | a = 4.914 Å, c = 5.405 Å |
Density | 2.684 g/cm³ |
Hardness | 7 (Mohs) |
Specific Heat Capacity | 0.18 cal/gm |
Melting Point | 1610℃ (Phase - transition Point: 573.1℃) |
Thermal Conductivity | 0.0033 cal/cm℃ |
Pyroelectric Constant | 1200 uv/℃ (300℃) |
Refractive Index | 1.544 |
Thermal Expansion Coefficients | α11: 13.71×10⁻⁶ /℃, α33: 7.48×10⁻⁶ /℃ |
Q - value | 1.8×10⁶ min |
Sound velocity, surface acoustic wave level | 3160 (m/sec) |
Frequency Constant | 1661 (kHz/mm) |
Piezoelectric Coupling | K²(%): BAW: 0.65, SAW: 0.14 |
Packaging Material | IEC Grade II |
Orientation | Y, X, or Z - cut, rotated at any value within 30º-42.75º ± 5 minutes of arc. Main orientation flat: Direction determined according to customer requirements ± 30 minutes of arc. Secondary orientation flat: Direction determined according to customer requirements. Seed crystal: Located at the center, with width < 5mm and height > 66mm. |
Polished Surfaces | Epitaxial polishing: Single-side or double-side polished, Ra < 10Å. Working area: Substrate diameter - 3mm. Bow: Φ3″ < 20um, Φ4″ < 30um. No edge chipping in the working area. At the edge, the chipping width is < 0.5mm. Pits and scratches: < 3 per piece, < 20 per 100 pieces. |
Standard Thickness | 0.5mm ± 0.05mm, TTV < 5um |
Standard Diameter | Φ2″ (50.8mm), Φ3″ (76.2mm), Φ4″ (100mm) ± 0.2mm. Main orientation flat: 22 ± 1.5mm (for Φ3″), 32 ± 3.0mm (for Φ4″). Secondary orientation flat: 10mm ± 1.5mm. |
Silicon Dioxide (SiO2) Crystal will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout the delivery process.
Heeger Materials Inc., a professional supplier and manufacturer of high-quality Photoelectric Crystals including Silicon Dioxide (SiO2) Crystal, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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