Pyrolytic Boron Nitride (PBN) MBE Crucible

The Pyrolytic Boron Nitride (PBN) MBE Crucible is the top choice for growing semiconductor materials via Molecular Beam Epitaxy (MBE). Its high purity, chemical inertness, thermal stability, low outgassing, and long lifespan make it ideal for this application. MBE is a key method for epitaxial growth of III-V and II-VI semiconductors, with PBN crucibles mainly used as beam source crucibles.

HM is a leading supplier of high-quality Pyrolytic Boron Nitride (PBN) products, including PBN rings, PBN plates/sheets/discs, PBN crucibles (OLED, MBE, VGF, LEC), PBN rods, PBN heaters, and PBN coatings.

Pyrolytic Boron Nitride (PBN) MBE Crucible Product Feature

• 500
• High purity (99.999%)
• Low outgassing in high-temperature
• Uniform thickness, Good consistency in heating
• Excellent thermal conductivity and shock resistance
• Easy cleaning and Reusability
• Inert, no reaction with acid and alkali 

Pyrolytic Boron Nitride (PBN) MBE Crucible Parameter

Pyrolytic Boron Nitride (PBN) MBE Crucible Typical Specifications

Types of Pyrolytic Boron Nitride (PBN) Crucibles 

OLED PBN Crucibles
As the name suggests, these PBN crucibles are used for OLED evaporation processes. They perform reliably at high temperatures, offer strong chemical inertness, and are well known for their thermal stability.

MBE PBN Crucibles
MBE crucibles are designed for molecular beam epitaxy processes. With the inherent inertness and thermal stability of PBN, these crucibles help slow the release of gases during chemical reactions, ensuring a cleaner and more controlled environment.

VGF PBN Crucibles
These crucibles are used for synthesizing materials such as GaAs and Ge. VGF PBN crucibles withstand high temperatures and support controlled crystal growth, helping reduce structural defects and improve crystal uniformity.

LEC BN Crucibles
The growth of GaAs and InP often relies on the liquid-encapsulated Czochralski (LEC) method. PBN LEC crucibles offer stable chemical properties and strong corrosion resistance. They are not easily affected by encapsulating materials, ensuring the slow and steady extraction of high-quality single crystals.

Pyrolytic Boron Nitride (PBN) MBE Crucible Application

• GaAs Single-Crystal Growth: Provides a clean, stable environment for producing high-purity gallium arsenide during molecular beam epitaxy.
• InP Epitaxial Growth: Supports the precise deposition and crystallization of indium phosphide for high-performance optoelectronic devices.
• III–V Semiconductor Fabrication: Used in MBE systems for growing materials such as AlGaAs, InGaAs, and related compound semiconductors.
• High-Vacuum Deposition: Ensures low contamination and stable thermal behavior during ultra-high-vacuum deposition processes.
• Advanced Electronic & Photonic Devices: Plays a critical role in forming high-quality layers for lasers, detectors, high-electron-mobility transistors (HEMTs), and other precision semiconductor components.

Pyrolytic Boron Nitride (PBN) MBE Crucible Packing

Pyrolytic Boron Nitride (PBN) MBE Crucible is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation, and to preserve the quality of our products in their original condition.

Where to Buy Pyrolytic Boron Nitride (PBN) MBE Crucible in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Boron Nitride (BN) Ceramic products, including Pyrolytic Boron Nitride (PBN) MBE Crucible, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.