Pyrolytic Boron Nitride (PBN) Products

Pyrolytic Boron Nitride (PBN) MBE Crucible-Heeger Materials Inc

View larger

Display all pictures

Pyrolytic Boron Nitride (PBN) MBE Crucible

Reference: PBN1274

Condition: New product

The Pyrolytic Boron Nitride (PBN) MBE Crucible serves as an evaporation vessel in MBE processes. This advanced ceramic can achieve 99.999% purity with high density and is produced through the Chemical Vapor Deposition (CVD) process. Heeger Materials offers top-quality PBN crucibles at competitive prices, with customized options for purity and size to meet specific requirements.

More details

Inquiry

Please contact us if you need customized services. We will contact you with the price and availability in 24 hours.

Data sheet

Purity	99.99%-99.999% (4N-5N)
Size	Per your request or drawing
Production Method	CVD

More info

The Pyrolytic Boron Nitride (PBN) MBE Crucible is the top choice for growing semiconductor materials via Molecular Beam Epitaxy (MBE). Its high purity, chemical inertness, thermal stability, low outgassing, and long lifespan make it ideal for this application. MBE is a key method for epitaxial growth of III-V and II-VI semiconductors, with PBN crucibles mainly used as beam source crucibles.

HM is a leading supplier of high-quality Pyrolytic Boron Nitride (PBN) products, including PBN rings, PBN plates/sheets/discs, PBN crucibles (OLED, MBE, VGF, LEC), PBN rods, PBN heaters, and PBN coatings.

Pyrolytic Boron Nitride (PBN) MBE Crucible

Pyrolytic Boron Nitride (PBN) MBE Crucible Product Feature

500
High purity (99.999%)
Low outgassing in high-temperature
Uniform thickness, Good consistency in heating
Excellent thermal conductivity and shock resistance
Easy cleaning and Reusability
Inert, no reaction with acid and alkali

Pyrolytic Boron Nitride (PBN) MBE Crucible Parameter

Properties	Units	Values
Density	g/cm³	1.95-2.20
Tensile Strength	MPa	112
Bending Strength	MPa	173
Compression Strength	MPa	154
Young's Modulus	GPa	18
Thermal Conductivity	W/m°C	"a" 60 "c" 2
Specific Heat	J/g·℃	0.90（RT）
Resistivity	Ω.cm	2×10¹⁵
Dielectric Strength	D.C. volts/mm	2×10¹⁵
Dielectric Constant		"c" 3.07
Metal Impurity Content	ppm	<10

Pyrolytic Boron Nitride (PBN) MBE Crucible Typical Specifications

MBE equipment	Specification	Inner Diameter (mm)	Lip Diameter (mm)	Height (mm)
Veeco	125cc	37	>55	118
Veeco	500cc	100	130	160
Veeco	1700cc	130	160	290
Veeco	3700cc	180	210	300
Riber	BN-100L	13	27	77
Riber	BN-125L	20	32	89
Riber	BN-135L	24	37	89
Riber	200cc	68	84	156
Note	The dimensions and shapes can be customized according to specific requirements.

Pyrolytic Boron Nitride (PBN) MBE Crucible Application

Pyrolytic Boron Nitride (PBN) MBE Crucible is mainly used for GaAs and InP compound semiconductor single-crystal growth.

Pyrolytic Boron Nitride (PBN) MBE Crucible Packing

Pyrolytic Boron Nitride (PBN) MBE Crucible is carefully packaged in cartons boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

Pyrolytic Boron Nitride (PBN) MBE Crucible Packing

Inquiry to Heeger Materials

Items marked with an asterisk (*) are required.

Privacy Information:

Heeger Materials respects your privacy, and we will NOT sell or provide your personal data to other third parties, or allow them to use your personal data for their own purposes. However, we would like to send you information from time to time by mail or email about our products and special offers in addition to the interest categories you've selected above. Read our Privacy Policy