Pyrolytic Boron Nitride (PBN) VGF Crucible-Heeger Materials Inc View larger

Pyrolytic Boron Nitride (PBN) VGF Crucible

PBN1275

New product

PBN crucibles are currently the most ideal containers for compound semiconductor single crystal growth. The main methods of compound semiconductor single crystal growth are liquid seal direct pulling (LEC), horizontal Brillman method (HB) and vertical Brillman method (VB and VGF), and the corresponding PBNs are LEC crucible, VB crucible and VGF crucible, etc.

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Data sheet

Purity99.99%-99.999% (4N-5N)
SizePer your request or drawing
Production MethodCVD

More info

VGF is the main technology for GaAs and InP compound semiconductor single crystal growth in the world.

Pyrolytic boron nitride (PBN) VGF crucible is the ideal vessel for single crystal growth by VGF. Heeger Materials supplies pyrolytic boron nitride(PBN) VGF crucible with high-quality and at a competitive price.  

Pyrolytic Boron Nitride (PBN) is a kind of advanced ceramic, can be produced with 99.999% purity in high density. It made by ammonia and Boron halide through Chemical Vapor deposition(CVD) process in high temperature and high vacuum condition: NH3 +BX3=BN+3HX, it can be produced as PBN plates, and also can be produced as PBN final products directly like crucible, boat, coating, etc.

Pyrolytic Boron Nitride (PBN) VGF Crucible Feature

  • High Purity (99.999%) 
  • No wetting with melt metal
  • Thermal conductivity controllable, improve the rate of yield
  • Excellent thermal shock resistance
  • Easy cleaning and Reusability
  • Inert, no reaction with acid and alkali  

Catalog No

Application

Inside Diameter

Height

Thickness

BV-2

VGF

2"

10"

0.035"

BV-3

VGF

3"

10"

0.035"

BV-4

VGF

4"

8"

0.035"

BV-5

VGF

5"

8"

0.04"

BV-6

VGF

6"

7"

0.04"

BV-8

VGF

8"

20"

0.08"

This form is for typical sizes, other size is customizable.

Pyrolytic Boron Nitride (PBN) VGF Crucible Parameter

Properties

Units

Values

Density

g/cm3

1.95-2.20

Tensile Strength

MPa

112

Bending Strength

MPa

173

Compression Strength

MPa

154

Young's Modulus

GPa

18

Thermal Conductivity

W/m°C

"a" 60    "c" 2

Specific Heat

J/g·℃

0.90(RT)

Resistivity

Ω.cm

2x1015

Dielectric Strength

D.C. volts/mm

2x1015

Dielectric Constant

 

"c" 3.07

Metal Impurity Content

ppm

<10

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