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Pyrolytic Boron Nitride (PBN) VGF Crucible
PBN1275
New product
PBN crucibles are currently the most ideal containers for compound semiconductor single crystal growth. The main methods of compound semiconductor single crystal growth are liquid seal direct pulling (LEC), horizontal Brillman method (HB) and vertical Brillman method (VB and VGF), and the corresponding PBNs are LEC crucible, VB crucible and VGF crucible, etc.
Inquiry
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Data sheet
| Purity | 99.99%-99.999% (4N-5N) |
| Size | Per your request or drawing |
| Production Method | CVD |
More info
VGF is the main technology for GaAs and InP compound semiconductor single crystal growth in the world.
Pyrolytic boron nitride (PBN) VGF crucible is the ideal vessel for single crystal growth by VGF. Heeger Materials supplies pyrolytic boron nitride(PBN) VGF crucible with high-quality and at a competitive price.
Pyrolytic Boron Nitride (PBN) is a kind of advanced ceramic, can be produced with 99.999% purity in high density. It made by ammonia and Boron halide through Chemical Vapor deposition(CVD) process in high temperature and high vacuum condition: NH3 +BX3=BN+3HX, it can be produced as PBN plates, and also can be produced as PBN final products directly like crucible, boat, coating, etc.
Pyrolytic Boron Nitride (PBN) VGF Crucible Feature
- High Purity (99.999%)
- No wetting with melt metal
- Thermal conductivity controllable, improve the rate of yield
- Excellent thermal shock resistance
- Easy cleaning and Reusability
- Inert, no reaction with acid and alkali
|
Catalog No |
Application |
Inside Diameter |
Height |
Thickness |
|
BV-2 |
VGF |
2" |
10" |
0.035" |
|
BV-3 |
VGF |
3" |
10" |
0.035" |
|
BV-4 |
VGF |
4" |
8" |
0.035" |
|
BV-5 |
VGF |
5" |
8" |
0.04" |
|
BV-6 |
VGF |
6" |
7" |
0.04" |
|
BV-8 |
VGF |
8" |
20" |
0.08" |
This form is for typical sizes, other size is customizable.
Pyrolytic Boron Nitride (PBN) VGF Crucible Parameter
|
Properties |
Units |
Values |
|
Density |
g/cm3 |
1.95-2.20 |
|
Tensile Strength |
MPa |
112 |
|
Bending Strength |
MPa |
173 |
|
Compression Strength |
MPa |
154 |
|
Young's Modulus |
GPa |
18 |
|
Thermal Conductivity |
W/m°C |
"a" 60 "c" 2 |
|
Specific Heat |
J/g·℃ |
0.90（RT） |
|
Resistivity |
Ω.cm |
2x1015 |
|
Dielectric Strength |
D.C. volts/mm |
2x1015 |
|
Dielectric Constant |
|
"c" 3.07 |
|
Metal Impurity Content |
ppm |
<10 |
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