PBN crucibles are currently the most...
PBN crucibles are currently the most ideal containers for compound semiconductor single crystal growth. The main methods of compound semiconductor single crystal growth are liquid seal direct pulling (LEC), horizontal Brillman method (HB) and vertical Brillman method (VB and VGF), and the corresponding PBNs are LEC crucible, VB crucible and VGF crucible, etc.
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VGF is the main technology for GaAs and InP compound semiconductor single crystal growth in the world.
Pyrolytic boron nitride (PBN) VGF crucible is the ideal vessel for single crystal growth by VGF. Heeger Materials supplies pyrolytic boron nitride(PBN) VGF crucible with high-quality and at a competitive price.
Pyrolytic Boron Nitride (PBN) is a kind of advanced ceramic, can be produced with 99.999% purity in high density. It made by ammonia and Boron halide through Chemical Vapor deposition(CVD) process in high temperature and high vacuum condition: NH3 +BX3=BN+3HX, it can be produced as PBN plates, and also can be produced as PBN final products directly like crucible, boat, coating, etc.
This form is for typical sizes, other size is customizable.
"a" 60 "c" 2
Metal Impurity Content