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Pyrolytic Boron Nitride (PBN) Products
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Pyrolytic Boron Nitride (PBN) LEC Crucible
PBN1276
New product
PBN crucibles are currently the most ideal containers for compound semiconductor single crystal growth. The main methods of compound semiconductor single crystal growth are liquid seal direct pulling (LEC), horizontal Brillman method (HB) and vertical Brillman method (VB and VGF), and the corresponding PBNs are LEC crucible, VB crucible and VGF crucible, etc.
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Data sheet
| Purity | 99.99%-99.999% (4N-5N) |
| Size | Per your request or drawing |
| Production Method | CVD |
More info
Liquid Encapsulation Czochralsk (LEC) is a method of using the liquid covering agent to seal the melt and control the volatilization to realize crystal growth. LEC Crucible is applied as a vessel of crystal growth in LEC. Heeger Materials supplies Pyrolytic Boron Nitride (PBN) LEC Crucible at high-quality and competitive prices.
Pyrolytic Boron Nitride (PBN) is a kind of advanced ceramic, that can be produced with 99.999% purity in high density. It is made by ammonia and Boron halide through Chemical Vapor deposition(CVD) process in high temperature and high vacuum conditions: NH3 +BX3=BN+3HX, it can be produced as PBN plates, and also can be produced as PBN final products directly like a crucible, boat, coating, etc.
Pyrolytic Boron Nitride (PBN) LEC Crucible Feature
- High Purity (99.999%)
- No wetting with melted metal
- Thermal conductivity is controllable, improves the rate of yield
- Excellent thermal shock resistance
- Easy cleaning and Reusability
- Inert, no reaction with acid and alkali
Pyrolytic Boron Nitride (PBN) LEC Crucible Specification
Catalog No | Application | Inside Diameter | Height | Thickness |
BL-3 | LEC | 3" | 3" | 0.03" |
BL-4 | LEC | 4" | 4" | 0.035" |
BL-5 | LEC | 5" | 5" | 0.035" |
BL-6 | LEC | 6" | 6" | 0.04" |
BL-7 | LEC | 7" | 7" | 0.04" |
BL-8 | LEC | 8" | 8" | 0.04" |
BL-14 | LEC | 14" | 14" | 0.08" |
Pyrolytic Boron Nitride (PBN) LEC Crucible Parameter
Properties | Units | Values |
Density | g/cm3 | 1.95-2.20 |
Tensile Strength | MPa | 112 |
Bending Strength | MPa | 173 |
Compression Strength | MPa | 154 |
Young's Modulus | GPa | 18 |
Thermal Conductivity | W/m°C | "a" 60 "c" 2 |
Specific Heat | J/g·℃ | 0.90（RT） |
Resistivity | Ω.cm | 2×1015 |
Dielectric Strength | D.C. volts/mm | 2×1015 |
Dielectric Constant |
| "c" 3.07 |
Metal Impurity Content | ppm | <10 |
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