Gallium arsenide (GaAs) is an III-V direct bandgap semiconductor with a zinc blend crystal structure. High-purity and ultra-high purity Gallium Arsenide (GaAs) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.

• Chemical formula: GaAs
• Molar mass: 144.645 g/mol
• Appearance: Gray crystals
• Odor: garlic-like when moistened
• Density: 5.3176 g/cm³
• Melting point: 1238 °C (2260 °F, 1511 K)
• Solubility in water: insoluble
• Solubility: soluble in HCl (insoluble in ethanol, methanol, acetone)
• Band gap: 1.441 eV (at 300 K)
• Electron mobility: 9000 cm2/(V·s) (at 300 K)
• Magnetic susceptibility (χ): -16.2×10−6 cgs
• Thermal conductivity: 0.56 W/(cm·K) (at 300 K)
• Refractive index (nD): 3.3
• Crystal structure:: Zinc blende

Gallium Arsenide Related Products

• Gallium Arsenide (GaAs)  Ingot
• Gallium Arsenide (GaAs)  Chip
• Gallium Arsenide (GaAs) Powder
• Gallium Arsenide (GaAs)  Sputtering Target

Gallium Arsenide Applications

• Used in semiconductor applications.
• Used in the manufacture of devices such as microwave frequency integrated circuits, Gunn diodes, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, and optical windows.
• Used for single-crystalline thin-film solar cells and multi-junction solar cells.
• Used for the detection of X-rays.
• Used in optoelectronic devices.

Gallium Arsenide Package

Gallium Arsenide (GaAs) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements.