Bismuth (III) sulfide (Bi2S3) has a layered (lamellar) structure much similar to other 2D crystals such as graphite, MoS2, and Sb2Te3. It is stabilized in the orthorhombic phase and has semiconducting behavior (~1.4 eV gap). It can be exfoliated down to monolayers through standard mechanical exfoliation techniques. The crystals were characterized and confirmed by x-ray diffraction (XRD), x-ray photoelectron spectroscopy, Raman, photoluminescence, SIMS, and Auger electron spectroscopy techniques.

High-purity and ultra-high-purity Bismuth Sulfide (Bi2S3) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.

• Molecular Formula: Bi2S3
• Purity: 99.99% -99.9999%
• EINECS NO.: 215-716-0
• CAS: 1345-07-9
• Molar mass: 514.16 g/mol
• Density: 6.78 g/cm³
• Melting point: 685 ˚C
• Solubility in water: insoluble
• Solubility: soluble in acid
• Magnetic susceptibility (χ): -123.0·10⁻⁶ cm³/mol

Bismuth (III) sulfide (Bi2S3) Crystal Specifications

Bismuth (III) sulfide (Bi2S3) Crystal XRD

Bismuth (III) sulfide (Bi2S3) Crystal Raman Spectrum

Bismuth (III) sulfide (Bi2S3) Crystal Photoluminescence Spectrum

Bismuth (III) sulfide (Bi2S3) Crystal Applications

• Used as a photosensitive material in the production of photovoltaic cells, photodetectors, and optoelectronic converters.
• Used in optical devices, infrared sensors, and semiconductor materials.
• Used in thermoelectric power generators and thermoelectric coolers.

Packing:

Bismuth Sulfide (Bi2S3) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements.