Gallium Selenide (Ga2Se3) exhibits a...
Gallium Selenide (Ga2Se3) exhibits a direct bandgap energy of about 2.2 eV, which makes it useful for photovoltaic and optoelectronic applications. Heeger materials can provide the best Gallium Selenide (Ga2Se3) with a purity of 99.99% and 99.999% in size of ingot, lump, and powder.
Gallium(III) selenide (Ga2Se3) is a compound semiconductor material, composed of Gallium and Selenium. It has a defective sphalerite (cubic form of ZnS) structure. It is a p-type semiconductor.
High-purity and ultra-high-purity Gallium selenide (Ga2Se3) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.
Gallium Selenide (Ga2Se3) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements.