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Arsenium Telluride | As2Te3 | CAS 12044-54-1

HTHP628

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Arsenium Telluride (As2Te3) is a semiconductor (~0.2-0.4 eV) and thermoelectric material. Heeger Materials can provide the best Arsenium Telluride (As2Te3) with a purity of 99.99% and  99.999% in size of lump, granule, crystal, and powder. The size can be tailored according to specific requirements.

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Data sheet

SymbolAs2Te3
Purity99.99%-99.999% (4N-5N)
Sizelump, granule, crystal, powder
ProductArsenium telluride
CAS12044-54-1

More info

Arsenium Telluride (As2Te3) is a crystalline solid used as a semiconductor and in photo optic applications. High-purity and ultra-high-purity Arsenium Telluride (As2Te3) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.

Arsenium Telluride | As2Te3 | CAS 12044-54-1

  • 12044-54-1
  • As2Te3
  • 99.99%-99.999 %
  • 3 mm - 12 mm (lump)
  • Class 6.1
  • 234-955-1
  • UN1557
  • PG II

Arsenium Telluride | As2Te3 | CAS 12044-54-1 Selection Notes

Arsenium Telluride | As2Te3 | CAS 12044-54-1 belongs to the semiconductor compound material range and is selected for controlled material quality, application-specific specifications and reliable supply for research or production use. It is commonly used in compound semiconductor research, thin-film deposition, thermoelectric materials, infrared materials, phase-change materials and optoelectronic development. When requesting a quote, confirm compound composition, purity, form, particle size when powder, stoichiometry, impurity limits, packaging and quantity.

Related Materials and Product Forms

For material comparison or adjacent product forms, browse all products, deposition materials, technical ceramics and Semiconductor Materials.

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What semiconductor compound details help with quoting? Please provide compound composition, purity, form, particle size if applicable, stoichiometry or impurity limits, packaging and intended semiconductor or thin-film use.

Arsenium Telluride (As2Te3) Crystal Specifications

Product

HM-As2Te3 Crystal

Crystal structure

Monoclinic C

Unit cell parameters

a = 1.430 nm, b = 0.403 nm, c = 0.986 nm, α = γ = 90°, β = 95.40°

Band gap

0.2~0.3 eV in bulk

Size

~8 mm

Purity

99.99% - 99.999% (4N-5N)

Characterized method

XRD, Raman, EDX

Arsenium Telluride (As2Te3) Crystal XRD

Arsenium Telluride | As2Te3 XRD

Arsenium Telluride (As2Te3) Crystal EDX

Arsenium Telluride | As2Te3 EDX

Arsenium Telluride (As2Te3) Crystal Raman

Arsennium Telluride | As2Te3 Raman

Related Products

  • Arsenium Telluride (As2Te3) Pieces
  • Arsenium Telluride (As2Te3) Granules
  • Arsenium Telluride (As2Te3) Powder
  • Arsenium Telluride (As2Te3) Sputtering Target

Arsenium Telluride Application

  • Used to manufacture infrared detectors, lasers, optical sensors, and other optoelectronic devices.
  • Used in the fields of phase-change memory, ferroelectric materials, and others.

Arsenium Telluride Packing

Arsenium Telluride (As2Te3) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements.

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