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Indium Arsenide | InAs | CAS 1303-11-3


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Indium Arsenide (InAs) is a narrow bandgap semiconductor, making it a good material for electronic devices operating at very high speed (and low power) electronics and for infrared detectors. Heeger Materials can provide the best Indium Arsenide (InAs) with a purity of 99.99%, 99.999%,99.9999%, and 99.99999% in size of ingot, lump, and powder.

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Data sheet

Purity99.999%-99.9999% (5N-6N)
ProductIndium arsenide

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Indium Arsenide (InAs) or indium arsenide is a semiconductor composed of indium and arsenic. Its appearance is gray cubic crystals. High-purity and ultra-high-purity Indium Arsenide (InAs) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.

Indium Arsenide | InAs | CAS 1303-11-3

  • Chemical formula: InAs
  • Purity: 99.99% -99.999%
  • EINECS number: 215-115-3
  • CAS: 1303-11-3
  • Molar mass: 189.740 g/mol
  • Density: 5.67 g/cm3
  • Melting point: 942°C (1,728°F; 1,215 K)
  • Band gap: 0.354 eV (300 K)
  • Electron mobility: 40000 cm2 /(V * s)
  • Thermal conductivity: 0.27 W / (cm * K) (300 K)
  • Refractive index (nD): 3.51
  • Crystal structure: zinc blend

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  • Used in the construction of infrared detectors with a wavelength range of 1–3.8 µm.
  • Used to make diode lasers.
  • Used as a terahertz radiation source as it is a strong Photo-dember emitter.


Indium Arsenide (InAs) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements.

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