Dysprosium Scandate Single Crystal Substrate

Data sheet

Molecular Formula	GaN

More info

Gallium Nitride (GaN) Crystal Substrate is a key material for advanced optoelectronic and semiconductor applications. As a wide-bandgap semiconductor, GaN offers superior electrical and thermal properties, making it ideal for high-power and high-frequency devices. Compared to traditional substrates like sapphire and SiC, GaN substrates provide better lattice matching for GaN-based epitaxial layers, reducing defects and improving device efficiency. They are widely used in LEDs, laser diodes, RF power amplifiers, and high-electron-mobility transistors (HEMTs) for 5G and radar systems. Heeger Materials provides high-quality Gallium Nitride Crystal Substrate to support various industrial and research applications.

Gallium Nitride Crystal Substrate | GaN Crystal Substrate

Gallium Nitride Crystal Substrate Specifications

Product Model (Item)	GaN-FS-10	GaN-FS-15
Dimensions	10.0mm × 10.5mm	14.0mm × 15.0mm
Macro Defect Density	A Level	0 cm⁻²
Macro Defect Density	B Level	≤ 2 cm⁻²
Thickness	Rank 300	300 ± 25 µm
	Rank 350	350 ± 25 µm
	Rank 400	400 ± 25 µm
Crystal Orientation	C-axis (0001) ± 0.5°
TTV (Total Thickness Variation)	≤15 µm
Bow	≤20 µm
Conduction Type	N-type	Semi-Insulating
Resistivity (300K)	< 0.5 Ω·cm	>10⁶ Ω·cm
Dislocation Density	Less than 5 × 10⁶ cm⁻²
Usable Surface Area	>90%
Polishing	Front Surface: Ra < 0.2 nm (Epi-ready polished)
Polishing	Back Surface: Fine ground

Gallium Nitride Crystal Substrate Applications

LED and Laser Diodes: Used as a substrate for high-brightness LEDs and laser diodes, improving efficiency and longevity.
High-Power and High-Frequency Electronics: Enables the production of GaN-based power devices and RF components for applications like 5G, radar, and satellite communications.
High-Electron-Mobility Transistors (HEMTs): Provide a stable platform for HEMTs used in microwave and millimeter-wave technologies.
UV and Visible Light Emitters: Supports the development of ultraviolet and visible light-emitting devices for display, medical, and industrial applications.
Next-Generation Semiconductor Research: Serves as a critical material for exploring new GaN-based electronic and optoelectronic technologies.

Gallium Nitride Crystal Substrate Packing And Shipping

Gallium Nitride (GaN) Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Where to Buy Gallium Nitride (GaN) Crystal Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality GaN Thin Film Substrate products including Gallium Nitride (GaN) Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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