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New Magnesium Aluminate Scandium Oxide Crystal Substrate | ScAlMgO4 Substrate-Heeger Materials Inc View larger

Magnesium Aluminate Scandium Oxide Crystal Substrate | ScAlMgO4 Substrate

HM2866

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Magnesium Aluminate Scandium Oxide (ScAlMgO4) Crystal Substrate is an advanced material for GaN and ZnO heteroepitaxial growth, offering minimal lattice mismatch and superior structural compatibility. Heeger Materials is a professional supplier and manufacturer of high-quality Magnesium Aluminate Scandium Oxide Crystal Substrate, offering customized solutions and competitive prices.

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Data sheet

Molecular FormulaScAlMgO4

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Magnesium Aluminate Scandium Oxide (ScAlMgO4) Crystal Substrate is a newly developed substrate material optimized for GaN and ZnO heteroepitaxial growth. Belonging to the hexagonal crystal system with lattice parameters a = 0.3246 nm and c = 2.5195 nm, it features a rhombohedral layered structure similar to wurtzite nitrides and ZnO. With a lattice mismatch of approximately 1.8% for GaN and just 0.09% for ZnO, it provides superior structural compatibility. Additionally, its thermal expansion coefficients (6.2×10⁻⁶/°C along the a-axis and 12.2×10⁻⁶/°C along the c-axis) ensure better thermal matching compared to conventional sapphire and silicon substrates. Heeger Materials provides high-quality ScAlMgO4 Crystal Substrate to support various semiconductor and optoelectronic applications.

Magnesium Aluminate Scandium Oxide Crystal Substrate | ScAlMgO4 Substrate

ScAlMgO4 Crystal Substrate Specifications

Orientation(0001)
Dimensions5×5mm, 10×10mm, 15×15mm, 20×20mm
NoteCustomization is available

Substrate Material Lattice Mismatch Rates with GaN and ZnO

Substrate Material

Orientation

Mismatch with GaN

Mismatch with ZnO

ScAlMgO₄

(0001)

+1.8%

+0.09%

ZnO

(0001)

+2.3%

---

SiC

(0001)

-3.5%

-5.2%

β-Ga₂O₃

(100)

+5%

-6.5%

Al₂O₃

(0001)

-13%

-18.4%

Si

(111)

+16.9%

+40.1%

ScAlMgO4 Crystal Substrate Applications

  • GaN Epitaxial Growth: Provides an optimal substrate for GaN-based electronic and optoelectronic devices with minimal lattice mismatch, improving film quality.
  • ZnO-Based Devices: Supports high-quality ZnO thin films for applications in UV photodetectors, transparent electronics, and piezoelectric devices.
  • High-Efficiency LEDs and Laser Diodes: Enhances the growth of GaN films for LEDs and laser diodes, offering better structural compatibility than traditional substrates.
  • High-Frequency and Power Electronics: Ideal for GaN-based high-power transistors and RF devices, ensuring improved performance and thermal stability.
  • Next-Generation Semiconductor Research: Serves as a promising substrate for advanced optoelectronic and semiconductor materials, aiding in the development of cutting-edge technologies.

ScAlMgO4 Crystal Substrate Packing And Shipping

Magnesium Aluminate Scandium Oxide (ScAlMgO4) Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Magnesium Aluminate Scandium Oxide Crystal Substrate | ScAlMgO4 Substrate Packing

Where to Buy ScAlMgO4 Crystal Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality GaN Thin Film Substrate products including Magnesium Aluminate Scandium Oxide (ScAlMgO4) Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors. 

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