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Platinum/Titanium/Silicon Dioxide/Silicon (Pt/Ti/SiO2/Si) Wafer is a multi-layer composite material with excellent electrical, thermal, and optical properties. Its structure consists of a silicon substrate, an insulating SiO2 layer, a Ti adhesion layer, and a Pt conductive layer, making it ideal for microelectronics, thermoelectric devices, and optoelectronic applications.
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| Materials | Pt/Ti/SiO2/Si Wafer |
Platinum/Titanium/Silicon Dioxide/Silicon (Pt/Ti/SiO2/Si) Wafer is a composite structure composed of a silicon substrate, an insulating layer of silicon dioxide, a titanium bonding layer, and a conductive platinum layer. This composition offers outstanding electrical conductivity, thermal stability, and chemical resistance, leading to its extensive use in microelectronics, integrated circuits, and thermoelectric applications. The platinum layer provides exceptional resistance to oxidation and corrosion, guaranteeing dependability in different settings, while the SiO2 coating improves optical clarity for possible photonic uses. Heeger Materials offers premium Pt/Ti/SiO2/Si Wafers with meticulous control over material characteristics to fulfill sophisticated technological needs.
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Platinum/Titanium/Silicon Dioxide/Silicon Wafer | Pt/Ti/SiO2/Si Wafer belongs to the single crystal substrate range and is selected for controlled substrate composition, orientation, dimensions, thickness, surface roughness, flatness and polishing quality. It is commonly used in epitaxial thin-film growth, electronic and photonic devices, oxide research, microscopy, surface science and materials development. When requesting a quote, confirm substrate composition, orientation, diameter or lateral dimensions, thickness, miscut, one-side or double-side polishing, roughness, flatness, termination or coating, packaging and quantity.
For material comparison or adjacent product forms, browse single crystal substrates, wafers and substrates and crystals and substrates.
What substrate specifications are needed for Platinum/Titanium/Silicon Dioxide/Silicon Wafer | Pt/Ti/SiO2/Si Wafer? Please provide material, orientation, dimensions, thickness, miscut, polishing sides, roughness, flatness, termination or coating, packaging, quantity and intended thin-film or device process.
| Pt Layer Thickness | 150nm |
| Ti Layer Thickness | 20nm |
| SiO2 Layer Thickness | 300nm |
| Substrate Material | Si wafer <100> P-type/B dia 4" x 0.5mm SSP |
| Resistivity | 2~4 ohm·cm |
| Custom Sizes | 10x10x0.5mm / 15x15x0.5mm or customized |
| Pt Layer Orientation | <111> film |
Platinum/Titanium/Silicon Dioxide/Silicon (Pt/Ti/SiO2/Si) Wafer will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout the delivery process.

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Single Crystal Substrates products including Platinum/Titanium/Silicon Dioxide/Silicon (Pt/Ti/SiO2/Si) Wafer, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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