Gallium Phosphide Single Crystal Substrate

Data sheet

Density	4.13 g/cm3
Materials	GaP Substrate
Melting Piont	1480 ℃

More info

Gallium Phosphide (GaP) Single Crystal Substrate is a synthetic III-V compound semiconductor material composed of gallium and phosphorus, known for its zinc-blende crystal structure and indirect bandgap of 2.26 eV at 300K. Its excellent optical and electrical properties make it essential for LED manufacturing, optoelectronic applications, and as a detector in terahertz time-domain spectroscopy (THz-TDS). The (110) orientation of GaP is particularly useful for THz detection, covering a spectral range of 0.1-6.5 THz. Heeger Materials provides high-quality GaP Substrate with reliable performance for advanced semiconductor and optical applications.

Gallium Phosphide Single Crystal Substrate | GaP Substrate

GaP Single Crystal Substrate Properties

Crystal Structure	Cubic, a = 5.4505 Å
Growth Method	Czochralski method
Density	4.13 g/cm³
Melting Point	1480 ℃
Thermal Expansion Coefficient	5.3 x 10⁻⁶
Dopants	Doped with S; Undoped
Thermal Conductivity	2~8 x 10¹⁷/cm³; 4~6 x 10¹⁶/cm³
Resistivity (W·cm)	~0.03; ~0.3
EPD (cm⁻²)	< 3 x 10⁵; < 3 x 10⁵

GaP Single Crystal Substrate Stock Specifications

Model	Orientation	Size (mm)	Thickness (mm)
GaP-110-5-0.03	<110>-cut	5 x 5	0.03
GaP-110-10-0.05	<110>-cut	10 x 10	0.05
GaP-110-10-0.1	<110>-cut	10 x 10	0.1
GaP-110-10-0.3	<110>-cut	10 x 10	0.3
GaP-110-10-0.4	<110>-cut	10 x 10	0.4
GaP-110-10-0.5	<110>-cut	10 x 10	0.5
GaP-110-10-1	<110>-cut	10 x 10	1
GaP-110-10-2	<110>-cut	10 x 10	2
GaP-110-10-2.5	<110>-cut	10 x 10	2.5
GaP-110-10-10-0.1-3	<110>-cut	N/A	100 µm layer optically bonded to 3 mm <100> GaP substrate
GaP-110-10-10-0.3-3	<110>-cut	N/A	300 µm layer optically bonded to 3 mm <100> GaP substrate

Customization: Other specifications can be customized upon request.
Mounting Option: GaP crystals can be mounted in a 25.4 mm outer diameter crystal holder.

GaP Single Crystal Substrate Time-Domain and Frequency Analysis

GaP Crystal Time-Domain and Frequency Analysis

This figure shows the results of a 40 fs titanium-sapphire laser-pumped broadband photoconductive antenna, detected using a 400 µm thick GaP crystal.

GaP Single Crystal Substrate Applications

Light-Emitting Diodes (LEDs): Used as a substrate material for red and green LEDs due to its indirect bandgap properties.
Optoelectronic Devices: Essential for photodetectors, optical sensors, and other semiconductor-based optical applications.
Terahertz Time-Domain Spectroscopy (THz-TDS): (110)-oriented GaP is widely used as a THz detector, covering a spectral range of 0.1-6.5 THz.
Semiconductor Research: Utilized in advanced semiconductor studies and device fabrication due to its stable crystal structure.
High-Frequency Electronics: Applied in high-speed and high-frequency electronic components for specialized applications.

GaP Single Crystal Substrate Packing And Shipping

Gallium Phosphide (GaP) Single Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout the delivery process.

Where to Buy Gallium Phosphide (GaP) Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Single Crystal Substrates products including Gallium Phosphide (GaP) Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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