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Silicon-On-Insulator (SOI) Wafer is a...
HM2870
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Silicon-On-Insulator (SOI) Wafer is a high-performance substrate designed for MEMS, power devices, pressure sensors, and CMOS integrated circuits. With a three-layer structure consisting of a device layer, buried oxide layer, and silicon substrate, SOI wafers offer enhanced speed and reduced power consumption, making them ideal for high-voltage and RF applications.
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Materials | SOI Wafer |
Silicon-On-Insulator (SOI) Wafer is a multilayer semiconductor material featuring a device layer, a buried oxide (SiO2) layer, and a silicon substrate. This structure provides excellent electrical isolation, reduced parasitic capacitance, and enhanced thermal performance, making SOI wafers a preferred choice for MEMS, power devices, pressure sensors, and CMOS integrated circuits. Manufactured using SIMOX and wafer bonding techniques, SOI wafers achieve precise device layer thickness, uniformity, and low defect density. Available in diameters from 2" to 8" with a resistivity range of 0.001–100,000 ohm-cm and device layer thickness from 100nm to 300µm, these wafers meet diverse application needs. Heeger Materials provides high-quality SOI wafers with reliable performance for advanced applications.
Category | Parameter | |
Overall | Wafer Diameter | 50/75/100/125/150/200 mm ± 25 µm |
Bow/Warp | <10 µm | |
Particles | <30 ea @ 0.3 µm | |
Flats/Notch | Flat or Notch | |
Edge Exclusion | / | |
Device Layer | Type/Dopant | N-Type/P-Type, B / P / Sb / As |
Orientation | <1-0-0> / <1-1-1> / <1-1-0> | |
Thickness | 0.1 ~ 300 µm | |
Resistivity | 0.001 ~ 100,000 Ω·cm | |
Particles | <30 ea @ 0.3 µm | |
TTV (Total Thickness Variation) | <10 µm | |
Finish | Polished | |
BOX (Buried Oxide Layer) | Thickness | 50 nm (500 Å) ~ 15 µm |
Handle Layer | Type/Dopant | N-Type/P-Type, B / P / Sb / As |
Orientation | <1-0-0> / <1-1-1> / <1-1-0> | |
Resistivity | 0.001 ~ 100,000 Ω·cm | |
Thickness | >100 µm | |
Finish | Polished | |
Customization | SOI wafers can be customized based on client specifications |
Silicon-On-Insulator (SOI) Wafer will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout the delivery process.
Heeger Materials Inc., a professional supplier and manufacturer of high-quality Single Crystal Substrates products including Silicon-On-Insulator (SOI) Wafer, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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