Dysprosium Scandate Single Crystal Substrate

Data sheet

Density	3.21 g/cm³
Materials	SiC Substrate

More info

Silicon Carbide (SiC) Single Crystal Substrate is widely used in high-power electronic devices, RF applications, and optoelectronics due to its excellent thermal conductivity, wide bandgap, and high breakdown voltage. 6H-SiC and 4H-SiC differ in their crystal structures, affecting their electrical properties—4H-SiC offers higher electron mobility, making it ideal for high-frequency and power-switching applications, while 6H-SiC provides a balance of electrical and mechanical properties for diverse uses. In addition to standard conductive substrates, we also provide Semi-insulated SiC Substrate and N-type SiC Substrate for specialized applications. Heeger Materials offers high-quality Silicon Carbide Single Crystal Substrate to meet various industrial and research demands.

Silicon Carbide Single Crystal Substrate | 6H-SiC/4H-SiC

Silicon Carbide Single Crystal Substrate Specifications

Growth Method	Seeded Sublimation Method, PVT (Physical Vapor Transport)
Crystal Structure	Hexagonal
Lattice Constants	a = 3.08 Å, c = 15.08 Å
Density	3.21 g/cm³
Orientation	Growth axis or off <0001> by 3.5º
Bandgap	3.26 eV (Indirect)
Hardness	9.2 (Mohs)
Thermal Conductivity @300K	5 W/cm·K
Dielectric Constant	ε(11) = ε(22) = 9.66, ε(33) = 10.33
Dimensions	10×3mm, 10×5mm, 10×10mm, 15×15mm, 20×15mm, 20×20mm, Dia50.8mm, Dia76.2mm, Dia101.6mm
Thickness	0.35mm
Polishing	Single-side or double-side polished
Crystal Orientation	<0001> ±0.5º
Crystal Orientation Accuracy	±0.5°
Edge Orientation Accuracy	2° (Special requirements can be reached within 1°)
Off-Cut Wafers	Wafers with edges inclined at specific angles (tilt range: 1°–45°) can be customized as required.
Ra (Surface Roughness)	≤5Å (5µm×5µm)

Semi-insulated SiC Substrate Specifications

Parameter	Production Grade	Research Grade	Dummy Grade
Grade	Production	Research	Dummy
Polytype/Surface Orientation On-axis/Off-axis	4H/<0001>/0±0.25°
FWHM	≤45 arcsec	≤60 arcsec	≤100 arcsec
Diameter/Thickness/Notch	200±0.2mm / 500±25μm / [1-100] ±5° / 1~1.5mm / Ra ≤0.2nm
Resistivity	≥1E8 Ω•cm	100% area >1E5 Ω•cm	70% area >1E5 Ω•cm
LTV (10mm×10mm)	≤5μm	≤10μm	≤15μm
TTV	≤10μm	≤15μm	≤20μm
Bow	-25μm ~ 25μm	-45μm ~ 45μm	-65μm ~ 65μm
Warp	≤35μm	≤50μm	≤70μm
Micropipe Density	≤2 ea/cm²	≤10 ea/cm²	≤50 ea/cm²
Metal Impurities	≤5E12 atoms/cm²		N/A

N-Type SiC Substrate Specifications

Parameter	Production Grade
Grade	Production	Research	Dummy
Polytype/Surface Orientation Tolerance	4H / 4° toward <11-20> ±0.5°
Type/Dopant	N-type / Nitrogen
Diameter/Thickness/Notch	200±0.2mm / 500±25μm / [1-100] ±5° / 1~1.5mm / Ra ≤0.2nm
Resistivity (Ω·cm)	0.015~0.025	0.01~0.03	N/A
LTV (10mm×10mm)	≤5μm	≤10μm	≤15μm
TTV	≤10μm	≤15μm	≤20μm
Bow	-25μm ~ 25μm	-45μm ~ 45μm	-65μm ~ 65μm
Warp	≤35μm	≤50μm	≤70μm
Micropipe Density	≤2 ea/cm²	≤10 ea/cm²	≤50 ea/cm²
Metal Impurities	≤5E12 atoms/cm²		N/A
TSD	≤500 ea/cm²	≤1000 ea/cm²	N/A
BPD	≤2000 ea/cm²	≤5000 ea/cm²	N/A
TED	≤7000 ea/cm²	≤10000 ea/cm²	N/A

Silicon Carbide Single Crystal Substrate Applications

High-Power Electronics: Used in power semiconductor devices like MOSFETs and Schottky diodes, enabling efficient energy conversion with lower power losses.
Radio Frequency (RF) Devices: Essential for high-frequency and high-power RF components in wireless communication, radar, and satellite systems.
Optoelectronics: Applied in LEDs, laser diodes, and UV photodetectors, benefiting from its wide bandgap and high thermal conductivity.
Electric Vehicles (EVs) and Renewable Energy: Supports the development of efficient inverters and power modules for EVs, solar power, and wind energy systems.
Aerospace and Defense: Used in advanced electronic systems for harsh environments, providing durability and performance under extreme conditions.

Silicon Carbide Single Crystal Substrate Packing And Shipping

Silicon Carbide (SiC) Single Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout the delivery process.

Where to Buy Silicon Carbide Single Crystal Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality GaN Thin Film Substrate products including Silicon Carbide (SiC) Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

Inquiry to Heeger Materials

Items marked with an asterisk (*) are required.

Privacy Information:

Heeger Materials respects your privacy, and we will NOT sell or provide your personal data to other third parties, or allow them to use your personal data for their own purposes. However, we would like to send you information from time to time by mail or email about our products and special offers in addition to the interest categories you've selected above. Read our Privacy Policy