Dysprosium Scandate Single Crystal Substrate

Data sheet

Density	4.18 g/cm3
Melting Piont	1600 ℃
Molecular Formula	LiGaO2

More info

Lithium Gallate (LiGaO2) Single Crystal Substrate is a promising material for GaN-based thin films due to its excellent lattice matching with GaN, with a lattice mismatch rate of less than 0.2%. This high degree of compatibility reduces defects and improves the quality of GaN epitaxial layers. Additionally, LiGaO2 offers strong chemical stability at high temperatures, making it suitable for high-performance applications in harsh environments. With its low cost and favorable properties, LiGaO2 is considered a potential substrate material for III-V nitride films used in LEDs, laser diodes, and other optoelectronic devices. Heeger Materials provides high-quality LiGaO2 Crystal Substrate for various industrial and research applications.

Lithium Gallate Single Crystal Substrate | LiGaO2 Crystal Substrate

Lithium Gallate Single Crystal Substrate Properties

Growth Method	Czochralski (Pulling Method)
Crystal Structure	Orthorhombic
Melting Point	1600 ℃
Density	4.18 g/cm³
Mohs Hardness	7.5
Lattice Constants	a = 5.406 Å, b = 5.012 Å, c = 6.379 Å
Color and Appearance	White to brown, no twinning or inclusions

Lithium Gallate Single Crystal Substrate Specifications

Crystal Orientation	<100>, <001> ±0.5°
Dimensions	Dia30 × 0.5mm, 20 × 20 × 0.5mm, 10 × 10 × 0.5mm, 10 × 5 × 0.5mm, 5 × 5 × 0.5mm
Customization	Special orientations and dimensions can be tailored to customer requirements.
Polishing	Single-side polishing, double-side polishing
Surface Roughness (Ra)	≤5Å

Lithium Gallate Single Crystal Substrate Applications

GaN-Based Thin Films: Ideal for the growth of GaN films with excellent lattice matching, enhancing the quality of GaN-based devices such as LEDs and laser diodes.
High-Performance Optoelectronics: Supports the development of high-efficiency optoelectronic devices, including UV and blue LEDs, due to its excellent structural compatibility with GaN.
High-Temperature Electronics: With its superior thermal stability, Lithium Gallate Single Crystal Substrate is suitable for high-power and high-temperature semiconductor devices.
Laser Diodes: Serves as a reliable substrate for GaN-based laser diodes, improving their performance and reducing defects.
III-V Nitride Devices: Used in the fabrication of III-V nitride-based devices, offering a cost-effective and stable substrate for various advanced electronic and optoelectronic applications.

Lithium Gallate Single Crystal Substrate Packing And Shipping

Lithium Gallate (LiGaO2) Single Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Where to Buy Gallium Nitride (LiGaO2) Crystal Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality GaN Thin Film Substrate products including Lithium Gallate (LiGaO2) Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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