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Indium Antimonide | InSb-Heeger Materials Inc

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Indium Antimonide | InSb

Reference: HTHP644

Condition: New product

Heeger Materials offers a selection of over 100 high-purity products, including metals, metal oxides, and metal salts, with 99.999% purity or higher. We can provide the best Indium Antimonide (InSb) with a purity of 99.99%, 99.999%,99.9999%, and 99.99999% in size of ingot, lump, and powder.

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Data sheet

Symbol	InSb
Purity	99.99%-99.999% (4N-5N)
Size	lump
Product	Indium antimonide
CAS	1312-41-0

More info

Indium Antimonide (InSb) is a crystalline semiconductor made of antimony and indium. It belongs to the III-V group and is a narrow-gap semiconductor material. Detectors made of indium antimonide are sensitive and lie between a wavelength of 1 and 5 µm. Indium antimonide was commonly used in mechanically scanned single-detector thermal imaging systems.

High-purity and ultra-high-purity Indium Antimonide (InSb) materials are crucial components for the research, development, and production of advanced technologies that require optimum properties, performance, and quality.

Indium Antimonide | InSb

Applications

As a terahertz radiation source, it is a strong photo-dember emitter.
It finds use in infrared detectors, including FLIR systems, thermal imaging cameras, infrared astronomy, and infrared-homing missile guidance systems.
In thermal image detectors using photo-electromagnetic detectors or photodiodes.
In magnetic field sensors using the Hall effect or magneto-resistance.
In fast transistors especially due to the high carrier mobility of InSb.

Chemical Properties

The chemical properties of indium antimonide are provided in the table below:

Chemical Properties
Chemical Formula	InSb
Molecular Weight	236.58 g/mol
CAS No.	1312-41-0
IUPAC Name	Indium antimonide
Group	III-V
Band Gap	0.17 eV
Band Gap Type	Indirect
Crystal Structure	Zinc Blende
Symmetry Group	T_d²-F43m
Lattice Constant	6.479 Angstroms

Electrical Properties

The electrical properties of indium antimonide are provided in the table below:

Electrical Properties
Intrinsic Carrier Concentration	2x10¹⁶cm^-3
Electron Mobility	≤7.7x10⁴cm² V^-1 s^-1
Hole Mobility	≤850 cm² V^-1 s^-1
Electron Diffusion Coefficient	≤2x10³ cm² s^-1
Hole Diffusion Coefficient	≤22 cm² s^-1
Electrical resistivity	4x10^-13Ωcm

Thermal, Mechanical and Optical Properties

The thermal, mechanical, and optical properties of indium antimonide are provided in the tables below:

Mechanical Properties
Melting Point	527 °C
Density	5.775 g cm^-3
Bulk Modulus	4.7•10¹¹ dyn cm^-2

Thermal Properties
Thermal Conductivity	0.18 W cm^-1 °C^-1
Thermal Diffusivity	0.16 cm² s^-1
Thermal Expansion Coefficient	5.37x10^-6 °C^-1

Optical Properties
Refractive Index (589 nm @ 293 K)	4
Radiative Recombination Coefficient (@ 300 K)	5x10^-11 cm³ s^-1

Safety Information

Safety Information
GHS Hazard Statements	H302-Harmful if swallowed H332-Harmful if inhaled H411-Toxic to aquatic life with long-lasting effects
Safety Precautions	S 61

Packing:

Indium Antimonide (InSb) is carefully packaged in carton boxes with foam protection to minimize damage during storage and transportation and to preserve the quality of our products in their original condition. The vacuum packing is 1kg/bag, 25kg/barrel, or based on specific requirements.

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