Dysprosium Scandate Single Crystal Substrate

Data sheet

Density	5.66 g/cm³
Melting Piont	942 ℃
Molecular Formula	InAs

More info

Indium Arsenide (InAs) Crystal Substrate is widely used for the epitaxial growth of heterostructure materials such as InAsSb, InNAsSb, and AlGaSb superlattices, supporting the development of infrared light-emitting devices operating in the 2–14 μm range. These materials are essential for gas sensing, low-loss fiber-optic communication, and mid-infrared quantum cascade lasers. InAs substrates offer high electron mobility, they are ideal for Hall effect devices and advanced semiconductor applications. To ensure optimal performance, InAs substrates require low dislocation density, excellent lattice integrity, appropriate electrical properties, and high uniformity. Heeger Materials provides high-quality InAs Crystal Substrate to support cutting-edge research and industrial applications.

Indium Arsenide Single Crystal Substrate | InAs Crystal Substrate

InAs Crystal Substrate Properties

Crystal	InAs
Structure	Cubic, a = 6.058 Å
Crystal Orientation	<100>
Melting Point (°C)	942
Density (g/cm³)	5.66
Bandgap (eV)	0.45

InAs Crystal Substrate Specifications

Single Crystal	Dopant	Conductivity Type	Carrier Concentration (cm⁻³)	Mobility (cm²/V·s)	Dislocation Density (cm⁻²)	Standard Substrate
InAs	Intrinsic	N	5×10¹⁶	2×10⁴	<5×10⁴	Φ2″×0.5mm, Φ3″×0.5mm
InAs	Sn	N	(5–20)×10¹⁷	>2000	<5×10⁴	Φ2″×0.5mm, Φ3″×0.5mm
InAs	Zn	P	(1–20)×10¹⁷	100–300	<5×10⁴	Φ2″×0.5mm, Φ3″×0.5mm
InAs	S	N	(1–10)×10¹⁷	>2000	<5×10⁴	Φ2″×0.5mm, Φ3″×0.5mm
Dimensions (mm):	Dia50.8×0.5mm, Dia30×0.5mm, 10×10×0.5mm, 10×5×0.5mm. Substrates with specific orientations and dimensions can be customized according to customer requirements.
Surface Roughness	(Ra) ≤5Å (Atomic force microscopy [AFM] inspection report available).
Polishing	Single-side or double-side polished.

InAs Crystal Substrate Applications

Infrared Optoelectronic Devices: InAs substrates enable the growth of InAsSb, InNAsSb, and other heterostructures for infrared LEDs and photodetectors in the 2–14 μm range.
Mid-Infrared Quantum Cascade Lasers: Supports the epitaxial growth of AlGaSb superlattice structures used in mid-infrared quantum cascade lasers for sensing and spectroscopy.
Gas Sensing and Environmental Monitoring: Used in infrared detectors for gas analysis, atmospheric monitoring, and industrial process control.
High-Speed and Low-Noise Electronics: With excellent electron mobility, InAs substrates are ideal for high-frequency transistors and low-noise amplifiers in advanced semiconductor applications.
Hall Effect Devices: Provides a high-performance platform for the fabrication of precise Hall sensors used in magnetic field measurement and current sensing.

InAs Crystal Substrate Packing And Shipping

Indium Arsenide (InAs) Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Where to Buy Indium Arsenide (InAs) Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Semiconductor Thin Film Substrate products, including Indium Arsenide (InAs) Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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