Dysprosium Scandate Single Crystal Substrate

Data sheet

Density	5.53 g/cm³
Melting Piont	712 ℃
Molecular Formula	GaSb

More info

Gallium Antimonide (GaSb) Single Crystal Substrate is a crucial material for infrared optoelectronics, offering excellent lattice matching with various ternary and quaternary III-V compound semiconductors in the 0.8–4.3 μm wavelength range. It is widely used as a substrate for mid-infrared lasers and detectors designed for optical fiber transmission. Additionally, GaSb has a higher lattice-limited carrier mobility than GaAs, making it a promising material for microwave device applications. GaSb crystals are typically grown using methods such as Liquid Encapsulated Czochralski (LEC), Modified LEC, Traveling Heater Method (THM), Vertical Gradient Freeze (VGF), and Vertical Bridgman (VB) techniques. Heeger Materials provides high-quality GaSb Crystal Substrate to support research and industrial applications.

Gallium Antimonide Single Crystal Substrate | GaSb Crystal Substrate

GaSb Crystal Substrate Properties

Structure	Cubic, a = 6.094 Å
Crystal Orientation	<100>
Melting Point (°C)	712
Density (g/cm³)	5.53
Bandgap (eV)	0.67

GaSb Crystal Substrate Specifications

Single Crystal	Dopant	Conductivity Type	Carrier Concentration (cm⁻³)	Dislocation Density (cm⁻²)	Standard Substrate	Growth Method
GaSb	None	P	1~2×10¹⁷	<10³	Φ3″×0.5, Φ2″×0.5	LEC
5GaSb	None high R	P-	1~5×10¹⁶
GaSb	Zn	P+	1~5×10¹⁸
GaSb	Te	N	2~6×10¹⁷
GaSb	Te high R	N	1~5×10¹⁶
Dimensions (mm)	Dia50.8×0.5mm, 10×10×0.5mm, 10×5×0.5mm. Custom substrate sizes and orientations are available upon request.
Surface Roughness (Ra)	≤5Å.
Polishing	Single-side or double-side polished

GaSb Crystal Substrate Applications

Mid-Infrared Optoelectronics: Used as a substrate for the growth of InAsSb and GaInAsSb heterostructures in mid-infrared lasers and photodetectors.
Infrared Fiber Optic Communication: Supports the fabrication of infrared light sources and detectors for low-loss optical fiber transmission systems.
Thermophotovoltaic (TPV) Cells: Enable the development of TPV devices for energy conversion in infrared power generation applications.
Microwave and High-Frequency Devices: With superior carrier mobility, GaSb substrates are used in high-speed transistors and microwave electronic components.
Quantum Cascade Lasers (QCLs): Provides a stable platform for epitaxial growth of QCL structures used in gas sensing, environmental monitoring, and spectroscopy.

GaSb Crystal Substrate Packing And Shipping

Gallium Antimonide (GaSb) Single Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Where to Buy Gallium Antimonide (GaSb) Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Semiconductor Thin Film Substrate products including Gallium Antimonide (GaSb) Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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