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New Indium Phosphide Single Crystal Substrate | InP Crystal Substrate-Heeger Materials Inc View larger

Indium Phosphide Single Crystal Substrate | InP Crystal Substrate

HM2866

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Indium Phosphide (InP) Single Crystal Substrate is a key material for optoelectronic and high-frequency applications, widely used in laser diodes (LDs), light-emitting diodes (LEDs), and photodetectors for fiber optic communication. It also supports high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) for microwave and millimeter-wave devices.

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Data sheet

Density4.79 g/cm³
Melting Piont1600 ℃
Molecular FormulaInP

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Indium Phosphide (InP) Single Crystal Substrate is one of the most important compound semiconductor materials, essential for manufacturing optoelectronic devices such as InP-based laser diodes (LDs), light-emitting diodes (LEDs), and photodetectors. These components enable optical signal transmission, amplification, and reception in fiber optic communication systems. In addition to substrates, Indium Phosphide (InP) Powder is also available for various semiconductor and research applications. Heeger Materials provides high-quality InP Crystal Substrate and InP Powder to support research and industrial applications.

Indium Phosphide Single Crystal Substrate | InP Crystal Substrate

InP Crystal Substrate Properties

StructureCubic, a = 5.869 Å
Crystal Orientation<100>
Melting Point (°C)1600
Density (g/cm³)4.79
Bandgap (eV)1.344

InP Crystal Substrate Specifications

Single Crystal

Dopant

Conductivity Type

Carrier Concentration (cm⁻³)

Dislocation Density (cm⁻²)

Growth Method

Standard Substrate

InP

None

N

1~2×10¹⁶

<5×10⁴

LEC

Φ2″×0.5mm

Φ2″×0.35mm

Φ3″×0.35mm

InP

Sn

N

1~3×10¹⁸

InP

S

N

1~4×10¹⁸

InP

Fe

Si

0.6~4×10¹⁸

InP

Zn

P

Dimensions (mm)

Dia50.8×0.35mm, 10×10×0.35mm, 10×5×0.35mm. Custom substrate sizes and orientations are available upon request.

Surface Roughness (Ra)

≤5Å

Polishing

Single-side or double-side polished

InP Crystal Substrate Applications

  • Optoelectronic Devices: Used in high-performance photodetectors, lasers, and LEDs due to their excellent electron mobility and direct bandgap properties.
  • High-Speed Electronics: Ideal for high-frequency and high-speed transistors, such as HEMTs and HBTs, in wireless communication and satellite systems.
  • Fiber Optic Communication: A key material for optical fiber networks, supporting the development of efficient and reliable telecommunication components like optical amplifiers and modulators.
  • Solar Cells: Applied in multi-junction solar cells for space applications, providing high efficiency and radiation resistance in harsh environments.
  • Quantum Computing & Sensing: Used in advanced research for quantum dots and infrared detectors, contributing to next-generation computing and sensing technologies.

InP Crystal Substrate Packing And Shipping

Indium Phosphide (InP) Single Crystal Substrate will be securely packaged in sturdy containers with cushioning materials to prevent movement or damage during shipping. This careful packaging ensures that the product arrives in perfect condition, maintaining its high-quality standards throughout delivery.

Indium Phosphide Single Crystal Substrate | InP Crystal Substrate Packing

Where to Buy Indium Phosphide (InP) Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Semiconductor Thin Film Substrate products including Indium Phosphide (InP) Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors. 

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