Nanometer Silicon Carbide Powder, SiC, CAS 409-21-2

Nanometer Silicon Carbide (SiC) Powder is a semiconductor material with many excellent properties, which is synthesized with high-purity silicon powder and carbon powder by a high-temperature solid-state reaction method. Its purity can reach 99.999% wt.

• Formula: SiC
• Molecular weight: 40.1 g/mol
• Density: 3.2~3.25 g/cm³
• Microhardness: 2840~3320 kg/mm2
• Mosh hardness: 9.5

Nanometer Silicon Carbide (SiC) Powder Specifications

Nanometer Silicon Carbide (SiC) Powder Properties

• High purity, small particle size distribution range, and high specific surface area
• Strong absorption capacity for infrared waves
• High thermal conductivity (165W/MK)
• Small coefficient of thermal expansion
• High hardness between corundum and diamond 
• Higher mechanical strength than corundum
• high-temperature anti-oxidation
• Good wear-resistant
• High-temperature resistance, corrosion, acid, and alkali solvent

Nanometer Silicon Carbide (SiC) Powder Applications

• Used as modified high-strength nylon materials
• Used to improve and enhance the wear resistance of special engineering plastics polyether ether ketone (PEEK)
• Used in the rubber tire
• Used in coatings and paints
• Used as infrared-absorbing and wave-transmitting materials
• Used in functional films or fibers
• Used for polishing and grinding
• Used as an ideal material for electronic semiconductors and optoelectronic devices

Nanometer Silicon Carbide (SiC) Powder Storage and Packing

Nanometer Silicon Carbide (SiC) Powder should be kept sealed and stored in a dry and cool place, avoiding being exposed to air for a long time. The vacuum-sealed packing is 100g/bag, 500g/bag, 1kg/bag, 25kg/drum, or as required.