As2S3 comes in perfect 2:3 stoichiometry. After 250 growth trials in 3 years, perfect stoichiometry, large domain size, minimal defect density (1 part in 100,000 unit cells), and perfected purity level (99.9998%) are achieved. In the bulk form, arsenic sulfide (As2S3) is a direct gap semiconductor and has a band-gap at around 2.5 eV. Similar to molybdenum disulfide, it has a layered structure (lamellar) with weak interlayer coupling and can be isolated down to monolayers. The monolayer thickness measures ~0.8 nm and the monolayer As_S_ is waiting to be discovered both experimentally and theoretically. Our crystals are large in size ~8mm and show remarkable PL characteristics. Our crystals are grown by state-of-the-art growth techniques over 8 weeks and show high crystallinity. Raman spectrum displays very sharp and clear modes with FWHM less than 6cm-1. As2S3 comes ready for exfoliation and is ideal for 2D research.

• Space group: P21/c
• Layered: Yes / Exfoliates to monolayers
• Bandgap: ~2.2 eV in bulk
• Purity: Semiconductor grade (6N) 99.9999%
• Growth technique: Bridgman-Stockburger
• Sample size: ~1 cm

High-purity and ultra-high purity Gallium sulfide (Ga2S3) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.

Usage:

It is crucial a component for the research, development, and production of advanced technologies.

Packing:

It is packed with dacron film, then covered with a sealed plastic film bag or in a polyethylene bottle.