Gamma layered phase of In2S3 is a direct gap semiconductor with an optical bandgap ranging from 2 eV - 3.25 eV. Its fundamental bandgap nature (direct vs indirect) and its value have been much debated in the field and remain open-ended. In2S3 is a particularly attractive semiconductor for photoelectrochemical, solar cell, and photonic applications. Typical crystal sizes range in few mm in size and each order contains 5-7 pieces of In2S3 crystals. The crystals appear layered but are harder to exfoliate compared to molybdenum disulfide. Thus, we recommend using highly adhesive tapes, ultrasonic exfoliation, or other methods to yield atomically thin sheets.

High-purity and ultra-high purity Indium Sulfide (In2S3) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.

• Available form: lump, powder
• CAS number: 12030-24-9
• Molecular weight: 325.83
• Name: Indium(III) sulfide
• Properties: orange-red powder
• Density (g/mL, 25℃): 4.45
• Melting point (oC): 1050
• Purity: 4N (99.99%) or better

Usage:

It is crucial a component for the research, development, and production of advanced technologies.

Packing:

It is packed with dacron film, then covered with a sealed plastic film bag or in a polyethylene bottle.