High-purity and ultra-high purity Gallium Arsenide (GaAs) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.

Gallium arsenide (GaAs) is a compound of the elements gallium and arsenic. It is an III-V direct bandgap semiconductor with a zinc blend crystal structure.

• Chemical formula：GaAs
• Molar mass：144.645 g/mol
• Appearance：Gray crystals
• Odor：garlic-like when moistened
• Density：5.3176 g/cm³
• Melting point：1,238 °C (2,260 °F; 1,511 K)
• Solubility in water：insoluble
• Solubility：soluble in HCl
• insoluble in ethanol, methanol, acetone
• Band gap：1.441 eV (at 300 K)
• Electron mobility：9000 cm2/(V·s) (at 300 K)
• Magnetic susceptibility (χ)：-16.2×10−6 cgs
• Thermal conductivity：0.56 W/(cm·K) (at 300 K)
• Refractive index (nD)：3.3
• Crystal structure：Zinc blende

Products

• Gallium Arsenide (GaAs)  Ingot
• Gallium Arsenide (GaAs)  Chip
• Gallium Arsenide (GaAs) Powder
• Gallium Arsenide (GaAs)  Sputtering Target

Application

Semiconductors (transistors, lasers, solar cells)Gallium arsenide is used in semiconductor applications. It is also used in the manufacture of devices such as microwave frequency integrated circuits, Gunn diodes, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, and optical windows. Further, it is used for single-crystalline thin-film solar cells and multi-junction solar cells. In addition, it is used for the detection of X-rays.

Package

It is packed with dacron film, then covered with a sealed plastic film bag or in a polyethylene bottle.

• Hazardous Class: Class 6.1
• EINECS No.:215-114-8
• UN No.:UN1557
• CAS:1303-00-0
• Package Class: PG II