High-purity and ultra-high purity Indium Arsenide (InAs) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.

Indium arsenide (InAs) or indium arsenide is a semiconductor composed of indium and arsenic. Its appearance is gray cubic crystals with a melting point of 942°C.

• Chemical formula: InAs
• Purity: 99.99% -99.999%
• EINECS number: 215-115-3
• CAS: 1303-11-3
• Molar mass: 189.740 g/mol
• Density: 5.67 g/cm3
• Melting point: 942°C (1,728°F; 1,215 K)
• Band gap: 0.354 eV (300 K)
• Electron mobility: 40000 cm2 /(V * s)
• Thermal conductivity: 0.27 W / (cm * K) (300 K)
• Refractive index (nD): 3.51
• Crystal structure: zinc blend

Products

• Indium Arsenide (InAs) Ingot
• Indium Arsenide (InAs) Chip
• Indium Arsenide (InAs) Wafer
• Indium Arsenide (InAs) Sputtering Target

Application

Indium arsenide is used in the construction of infrared detectors with a wavelength range of 1–3.8 µm. The detector is usually a photovoltaic photodiode. Cryogenically cooled detectors have lower noise, but InAs detectors can also be used in higher power applications at room temperature. Indium arsenide is also used to make diode lasers.

Packing

It is packed with dacron film, then covered with a sealed plastic film bag or in a polyethylene bottle.

• Packing grade: PG III UN
• Dangerous Goods Code: UN1557
• Specification: 3mm-6mm
• Dangerous goods grade: Class 6.1