High-purity and ultra-high purity CIGS (Cu.InxGa1-xSe2) materials are crucial components for the research, development, and production of advanced technologies which require optimum properties, performance, and quality.

Copper indium gallium (di)selenide (CIGS) is a I-III-VI₂ semiconductor material composed of copper, indium, gallium, and selenium. The material is a solid solution of copper indium selenide (often abbreviated "CIS") and copper gallium selenide. It has a chemical formula of CuIn_(1-x)Ga_(x)Se₂ where the value of x can vary from 0 (pure copper indium selenide) to 1 (pure copper gallium selenide). CIGS is a tetrahedrally bonded semiconductor, with the chalcopyrite crystal structure, and a bandgap varying continuously with x from about 1.0 eV (for copper indium selenide) to about 1.7 eV (for copper gallium selenide).

It is best known as the material for CIGS solar cells a thin-film technology used in the photovoltaic industry. In this role, CIGS has the advantage of being able to be deposited on flexible substrate materials, producing highly flexible, lightweight solar panels. Improvements in efficiency have made CIGS an established technology among alternative cell materials.

Usage:

It is crucial a component for the research, development, and production of advanced technologies.

Packing:

It is packed with dacron film, then covered with a sealed plastic film bag or in a polyethylene bottle.