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Aluminum Nitride (AlN) Single Crystal...
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Aluminum Nitride (AlN) Single Crystal Substrate provides outstanding thermal conductivity and electrical insulation, making it suitable for high-performance uses in electronics and optoelectronics. HM offers premium Aluminum Nitride Single Crystal Substrate in different sizes with uniform quality, guaranteeing dependable outcomes for advanced applications.
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Density | 3.23 g/cc |
Melting Piont | 2750 ℃ (under 10-100 bar of Nitrogen) |
Aluminum Nitride (AlN) Single Crystal Substrate delivers high-quality performance with excellent thermal conductivity, electrical insulation, and mechanical properties. Available in standardized sizes such as 10x10mm, 10mm, 15mm, 20mm, 25.4mm, 30mm, and 50.8mm, it is also offered in non-polar M-Plane Aluminum Nitride Single Crystal Substrate in sizes from 10mm to 20mm. Additionally, HM can provide customized non-standard sizes ranging from 5mm to 50.8mm for specific needs. Widely used in advanced applications, including UVC-LED chips, ultraviolet detectors, ultraviolet lasers, and various high-power, high-temperature, and high-frequency electronic devices, this substrate is essential for high-end material needs. Heeger Materials (HM) provides high-quality Aluminum Nitride Single Crystal Substrate with consistent quality, ensuring reliable results for your specific needs. Furthermore, we offer Aluminum Nitride (AlN) Ceramic Substrate to fulfill particular requirements.
Specification Parameter | Value | ||
Shape | Square and Round | ||
Dimension (mm) | Square: 10x10 Round: Φ10, Φ15, Φ20, Φ25.4, Φ30, Φ50.8 | ||
Thickness (µm) | 400 ± 50 | ||
Crystal Type | 2H | ||
Crystal Orientation | {0001} ± 0.5˚ | ||
Surface Finish | Chemical Polishing (Double-side customizable) | ||
Surface Roughness | Al Face: ≤0.5 nm N Face (Backside): ≤1.2 μm | ||
Quality Grade | S Grade (Super) | P Grade (Production) | R Grade (Research) |
HRXRD FWHM@(0002) (arcsec) | ≤ 150 | ≤ 300 | ≤ 500 |
HRXRD FWHM@(10-12) (arcsec) | ≤ 100 | ≤ 200 | ≤ 400 |
Absorption Coefficient@265nm (cm⁻¹) | ≤ 50 | ≤ 70 | ≤ 100 |
Edge Exclusion Area (mm) | 1 | 1 | 1 |
Scratches | None | None | None |
Chipping | None | None | ≤ 3 Cumulative ≤ 1.0mm |
Available Area | ≥ 90% | ||
Total Thickness Variation (μm) | ≤ 30 | ||
Warpage (μm) | ≤ 30 | ||
Curvature (μm) | ≤ 30 | ||
Crack | None, Naked Eye, Strong Light | ||
Surface Contamination | None, Naked Eye, Scattered Light | ||
Packaging | Single Wafer Round Box |
1. UV Absorption Coefficient Spectrum: 2. Raman Full Width At Half Maximum (FWHM):
3. 0002 HRXRD Rocking Curve: 4. 10-12 HRXRD Rocking Curve:
5. Chemically Polished Al Polar Surface 6. Wet Etched Aluminum Polar Surface SEM
AFM Morphology EPD < 2.3x10^5/cm²
Impurity Element | C | O | Si | B | Na | W | P | S | Ti | Fe |
Content (PPMW) | 27 | 90 | 5.4 | 0.92 | 0.23 | <0.1 | <0.1 | <0.5 | 0.46 | <0.5 |
Common Parameters | Values |
Crystal Structure | Wurtzite - type |
Lattice Constant (Å) | a = 3.112, c = 4.982 |
Conduction Band Type | Direct Bandgap |
Crystal Density (g/cm³) | 3.23 |
Knoop Hardness of the Surface | 800 |
Melting Point (°C) | 2750 (under 10 - 100 bar of nitrogen) |
Thermal Conductivity (W/m·K) | 320 |
Bandgap (eV) | 6.28 |
Electron Mobility (V·s/cm²) | 1100 |
Breakdown Field Strength (MV/cm) | 11.7 |
Sound Velocity (m/s) | 11300 |
Heeger Materials Inc., a professional supplier and manufacturer of high-quality Aluminum Nitride (AlN) products, including Aluminum Nitride Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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