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Aluminum Nitride Single Crystal Substrate | AlN

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Aluminum Nitride (AlN) Single Crystal Substrate provides outstanding thermal conductivity and electrical insulation, making it suitable for high-performance uses in electronics and optoelectronics. HM offers premium Aluminum Nitride Single Crystal Substrate in different sizes with uniform quality, guaranteeing dependable outcomes for advanced applications. 

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Data sheet

Density3.23 g/cc
Melting Piont2750 ℃ (under 10-100 bar of Nitrogen)

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Aluminum Nitride (AlN) Single Crystal Substrate delivers high-quality performance with excellent thermal conductivity, electrical insulation, and mechanical properties. Available in standardized sizes such as 10x10mm, 10mm, 15mm, 20mm, 25.4mm, 30mm, and 50.8mm, it is also offered in non-polar M-Plane Aluminum Nitride Single Crystal Substrate in sizes from 10mm to 20mm. Additionally, HM can provide customized non-standard sizes ranging from 5mm to 50.8mm for specific needs. Widely used in advanced applications, including UVC-LED chips, ultraviolet detectors, ultraviolet lasers, and various high-power, high-temperature, and high-frequency electronic devices, this substrate is essential for high-end material needs. Heeger Materials (HM) provides high-quality Aluminum Nitride Single Crystal Substrate with consistent quality, ensuring reliable results for your specific needs. Furthermore, we offer Aluminum Nitride (AlN) Ceramic Substrate to fulfill particular requirements.

Aluminum Nitride Single Crystal Substrate | AlN

AlN Single Crystal Substrate Specifications

Specification Parameter

Value

Shape

Square and Round

Dimension (mm)

Square: 10x10

Round: Φ10, Φ15, Φ20, Φ25.4, Φ30, Φ50.8

Thickness (µm)

400 ± 50

Crystal Type

2H

Crystal Orientation

{0001} ± 0.5˚

Surface Finish

Chemical Polishing (Double-side customizable)

Surface Roughness

Al Face: ≤0.5 nm 

N Face (Backside): ≤1.2 μm

Quality Grade

S Grade (Super)

P Grade (Production)

R Grade (Research)

HRXRD FWHM@(0002) (arcsec)

≤ 150

≤ 300

≤ 500

HRXRD FWHM@(10-12) (arcsec)

≤ 100

≤ 200

≤ 400

Absorption Coefficient@265nm (cm⁻¹)

≤ 50

≤ 70

≤ 100

Edge Exclusion Area (mm)

1

1

1

Scratches

None

None

None

Chipping

None

None

≤ 3

Cumulative ≤ 1.0mm

Available Area

≥ 90%

Total Thickness Variation (μm)

≤ 30

Warpage (μm)

≤ 30

Curvature (μm)

≤ 30

Crack

None, Naked Eye, Strong Light

Surface Contamination

None, Naked Eye, Scattered Light

Packaging

Single Wafer Round Box

AlN Single Crystal Substrate Partial Characterization Results

1. UV Absorption Coefficient Spectrum:                                   2. Raman Full Width At Half Maximum (FWHM):      

 UV Absorption Coefficient Spectrum                           Raman Half-Width at Half Maximum (HWHM)

3. 0002 HRXRD Rocking Curve:                                                  4. 10-12 HRXRD Rocking Curve:

0002/10-12 HRXRD Rocking Curve                           0002/10-12 HRXRD Rocking Curve

5. Chemically Polished Al Polar Surface                                    6. Wet Etched Aluminum Polar Surface SEM

               AFM Morphology                                                                              EPD < 2.3x10^5/cm²

Chemically Polished Al Polar Surface AFM Morphology                          Wet Etched Aluminum Polar Surface SEM

Aluminum Nitride Crystal Structure

Aluminum Nitride Crystal Structure                      Aluminum Nitride Crystal Structure

AlN Single Crystal Substrate Main Impurity Content

Impurity Element

C

O

Si

B

Na

W

P

S

Ti

Fe

Content (PPMW)

27

90

5.4

0.92

0.23

<0.1

<0.1

<0.5

0.46

<0.5

Aluminum Nitride Material Physical Property Parameters 

Common ParametersValues

Crystal Structure

Wurtzite - type 

Lattice Constant (Å)

a = 3.112, c = 4.982

Conduction Band Type

Direct Bandgap

Crystal Density (g/cm³)

3.23

Knoop Hardness of the Surface

800

Melting Point (°C)

2750 (under 10 - 100 bar of nitrogen)

Thermal Conductivity (W/m·K)

320

Bandgap (eV)

6.28

Electron Mobility (V·s/cm²)

1100

Breakdown Field Strength (MV/cm)

11.7

Sound Velocity (m/s)

11300

AlN Single Crystal Substrate Applications

  • UVC-LED Chips and UV Optoelectronics: Aluminum Nitride is the ideal substrate for UVC-LED chips, ultraviolet detectors, and ultraviolet lasers due to its high thermal conductivity, which ensures efficient heat dissipation and optimal performance in high-power optoelectronic devices.
  • High-Power, High-Frequency Electronics: AlN is widely used in high-power, high-frequency RF devices, including those for 5G communications. Its excellent electrical insulation, high breakdown field strength, and electron mobility make it perfect for high-performance electronic applications.
  • UV Purification and Sterilization: With its exceptional properties, Aluminum Nitride is used in UV purification systems for water disinfection, air sterilization, and surface sanitation. It is also integral in industrial processes like UV curing and UV catalysis.
  • Medical and Biotech Applications: Aluminum Nitride is used in medical light therapy, pharmaceutical research, and bioengineering applications, providing reliable performance in devices for medical illumination and drug development due to its biocompatibility and high thermal stability.
  • Advanced Military and Secure Communications: AlN substrates are employed in military-grade electronics and secure communication systems. Their resistance to high temperatures, radiation, and corrosion makes them essential for critical applications in defense and secure, high-frequency communication technologies.

Where To Buy Aluminum Nitride Single Crystal Substrate In Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality Aluminum Nitride (AlN) products, including Aluminum Nitride Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.

Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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