Aluminum Nitride (AlN) Ceramic Substrate

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Aluminum Nitride (AlN) Ceramic Substrate serves as an excellent heat dissipation and encapsulation material for next-generation LED lighting, large-scale integrated circuits, semiconductor module circuits, and high-power devices. Heeger Materials is a professional supplier and manufacturer of AlN Substrate, with customized options for shapes and dimensions to meet specific requirements.

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Data sheet

MaterialsAlN
SizePer request or drawing

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Aluminum Nitride (AlN) Ceramic Substrate possesses outstanding properties, including strong mechanical stress, stable shape, high strength, high thermal conductivity, high insulation resistance, strong bonding, corrosion resistance, and excellent thermal cycling performance, effectively addressing high-temperature and high-power environments. HM also can provide high-quality Laser Cutting Aluminum Nitride (AlN) Ceramic Substrates according to specific drawings.

Aluminum Nitride (AlN) Ceramic Substrate

  • High thermal conductivity, up to 5~10 times than that of Alumina (Al2O3).
  • Similar coefficient of thermal expansion to that of silicon (Si).
  • Good mechanical properties, and flexural strength close to that of Alumina (Al2O3).
  • High electrical resistivity and low dielectric loss.
  • Good compatibility with the circuit materials, enabling multi-layer wiring for high-density and miniaturized packaging.
  • High purity, no toxicity.

Aluminum Nitride (AlN) Ceramic Substrate Parameters

Item

Unit

AlN-170

AlN-190

AlN-200

AlN-230

Density

g/cm3

3.3

3.3

3.28

3.3

Melting Point

2500

2500

--

--

Surface roughness

μm

0.2~0.6

0.3~0.5

0.2~0.5

0.2~0.6

Thermal

Thermal Conductivity

25℃ W/(m.k)

170-190

190-210

204

233

Coefficient of thermal expansion

20~300℃ (10-6/℃)

4.6

4.6

4.0-5.0

4.0-5.0

Electrical

Dielectric Constant

1 MHz, 25℃

8.56

8.56

--

--

Dielectric Loss

1 MHz, 25℃

4.6×10-4

4.6×10-4

--

--

Volume resistivity

20℃.Ω.cm

1.4×1014

1.4×1014

>1014

>1014

Dielectric Strength

KV/mm

≥15

≥15

>20

>20

Mechanical

Flexural  Strength

Mpa

300-400

300-400

350

300

Elastic Modulus

GPa

310-320

310-320

--

--

Warpage

~/25(length)

≤3‰

≤3‰

≤3‰

≤3‰

Aluminum Nitride (AlN) Ceramic Substrate Specifications

ProductThickness Length & Width
170W Standard Product0.381 mm

4×4 inch (101.6×101.6 mm)

4.5×4.5 inch (114.3×114.3 mm)

120×120 mm

5×5 inch (127×127 mm)

5.5×7.5 inch (139.7×190.5 mm)

0.5 mm
0.635 mm
1.0 mm
1.5 mm
170W Non-standard Product0.1~0.2 mm2×2 inch (50.8×50.8 mm)
0.2~0.3 mm

2×2 inch (50.8×50.8 mm)

3×3 inch (76.2×76.2 mm)

4×4 inch (101.6×101.6 mm)

4.5×4.5 inch (114.3×114.3 mm)

2.0~3.0 mm
1.0~3.0 mm150 mm, 200 mm, 300 mm
200W(0.3~0.38)±0.01 mm4.5×4.5 inch (114.3×114.3 mm)
230W(0.3~0.38)±0.01 mm4.5×4.5 inch (114.3×114.3 mm)

*HM can provide customized dimensions according to specific drawings.

 Aluminum Nitride (AlN) Ceramic Substrate products

What Is AlN Ceramic Substrate?

Aluminum nitride (AlN) is the only technical ceramic material with extremely high thermal conductivity and excellent electrical insulation properties. The main application area of AlN is electronic device packaging, used as an insulating heat dissipation substrate for electronic components. AlN ceramic substrates are considered to be the best substrate material for their excellent comprehensive performance. In the fields of power semiconductor devices, hybrid integrated circuits, antennas in the communication industry, solid relays, power LEDs, multi-chip packaging (MCM), etc., the demand for AlN ceramic substrates is growing.

Advantages of AlN Ceramic Substrates

  • High thermal conductivity, up to 170W/(m·K) or more
  • The thermal expansion coefficient matches that of Si and GaAs
  • Excellent electrical properties (dielectric constant, dielectric loss, volume resistivity, and dielectric strength)
  • Good mechanical properties, higher flexural strength than BEO ceramics, and can be sintered at normal pressure
  • Non-toxic, environmentally friendly material

Application of AlN Ceramic Substrate

AlN Ceramic Substrates can be used with AMB, DBC, DPC, HTCC, and other processes to produce different types of products to meet the needs of different application scenarios.

  1. AMB and DBC are mainly used for IGBT, and they are growing rapidly with the development of new energy and electric vehicles.
  2. DPC-AlN is mainly used in the high-power LED market.
  3. HTCC and LTCC are mainly used in the RF and military fields, especially the thermal conductivity of AlN HTCC multilayer substrate materials can be as high as (170~190) W/(m·K), and the thermal expansion coefficient is only 4.2×10-6/°C, which is close to semiconductor material devices such as Si, GaAs, and GaN. It has high strength and good density, can meet the requirements of packaging airtightness, and has become the preferred substrate material and packaging material for high-power MCM.

Aluminum Nitride (AlN) Ceramic Substrate Processing

  • Mechanical Processing
  • Laser Processing
  • Polishing / Lapping (Ra: 0.02-0.05 μm)
  • Metalization
  • Other processing methods can be customized according to specific requirements.

Aluminum Nitride (AlN) Ceramic Substrate Applications

  • Heat dissipation substrates
  • LED packages
  • Semiconductors
  • Thin-film circuits
  • Power resistors

Aluminum Nitride (AlN) Ceramic Substrate Packing

Aluminum Nitride (AlN) Ceramic Substrate is carefully packaged with adhesive-free surface protection tape and cardboard boxes to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

Aluminum Nitride (AlN) Ceramic Substrate Packing

Where to Buy AlN Substrate in Bulk?

Heeger Materials Inc., a professional supplier and manufacturer of high-quality AlN Products including AlN Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction. You can safely choose to buy AlN Substrate from Heeger Materials Inc..

Heeger Materials Inc. was established in 2016 in Colorado, USA. We are a specialized supplier of premium-grade metals, alloys, ceramics, powders, and various other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.

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