Aluminum Nitride (AlN) Ceramic Substrate

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Aluminum Nitride (AlN) Ceramic Substrate serves as an excellent heat dissipation and encapsulation material for next-generation LED lighting, large-scale integrated circuits, semiconductor module circuits, and high-power devices. Heeger Materials offers top-quality Aluminum Nitride (AlN) Ceramic Substrate at competitive prices, with customized options for specific requirements.

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Data sheet

MaterialsAlN
SizePer request or drawing

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Aluminum Nitride (AlN) Ceramic Substrate possesses outstanding properties, including strong mechanical stress, stable shape, high strength, high thermal conductivity, high insulation resistance, strong bonding, corrosion resistance, and excellent thermal cycling performance, effectively addressing high-temperature and high-power environments. HM also can provide high-quality Laser Cutting Aluminum Nitride (AlN) Ceramic Substrates according to specific drawings.

Aluminum Nitride (AlN) Ceramic Substrate

  • High thermal conductivity, up to 5~10 times than that of Alumina (Al2O3).
  • Similar coefficient of thermal expansion to that of silicon (Si).
  • Good mechanical properties, and flexural strength close to that of Alumina (Al2O3).
  • High electrical resistivity and low dielectric loss.
  • Good compatibility with the circuit materials, enabling multi-layer wiring for high-density and miniaturized packaging.
  • High purity, no toxicity.

Aluminum Nitride (AlN) Ceramic Substrate Parameters

Item

Unit

AlN-170

AlN-190

AlN-200

AlN-230

Density

g/cm3

3.3

3.3

3.28

3.3

Melting Point

2500

2500

--

--

Surface roughness

μm

0.2~0.6

0.3~0.5

0.2~0.5

0.2~0.6

Thermal

Thermal Conductivity

25℃ W/(m.k)

170-190

190-210

204

233

Coefficient of thermal expansion

20~300℃ (10-6/℃)

4.6

4.6

4.0-5.0

4.0-5.0

Electrical

Dielectric Constant

1 MHz, 25℃

8.56

8.56

--

--

Dielectric Loss

1 MHz, 25℃

4.6×10-4

4.6×10-4

--

--

Volume resistivity

20℃.Ω.cm

1.4×1014

1.4×1014

>1014

>1014

Dielectric Strength

KV/mm

≥15

≥15

>20

>20

Mechanical

Flexural  Strength

Mpa

300-400

300-400

350

300

Elastic Modulus

GPa

310-320

310-320

--

--

Warpage

~/25(length)

≤3‰

≤3‰

≤3‰

≤3‰

Aluminum Nitride (AlN) Ceramic Substrate Specifications

ProductThickness Length & Width
170W Standard Product0.381 mm

4×4 inch (101.6×101.6 mm)

4.5×4.5 inch (114.3×114.3 mm)

120×120 mm

5×5 inch (127×127 mm)

5.5×7.5 inch (139.7×190.5 mm)

0.5 mm
0.635 mm
1.0 mm
1.5 mm
170W Non-standard Product0.1~0.2 mm2×2 inch (50.8×50.8 mm)
0.2~0.3 mm

2×2 inch (50.8×50.8 mm)

3×3 inch (76.2×76.2 mm)

4×4 inch (101.6×101.6 mm)

4.5×4.5 inch (114.3×114.3 mm)

2.0~3.0 mm
1.0~3.0 mm150 mm, 200 mm, 300 mm
200W(0.3~0.38)±0.01 mm4.5×4.5 inch (114.3×114.3 mm)
230W(0.3~0.38)±0.01 mm4.5×4.5 inch (114.3×114.3 mm)

*HM can provide customized dimensions according to specific drawings.

 Aluminum Nitride (AlN) Ceramic Substrate products

Aluminum Nitride (AlN) Ceramic Substrate Processing

  • Mechanical Processing
  • Laser Processing
  • Polishing / Lapping (Ra: 0.02-0.05 μm)
  • Metalization
  • Other processing methods can be customized according to specific requirements.

Aluminum Nitride (AlN) Ceramic Substrate Applications

  • Heat dissipation substrates
  • LED packages
  • Semiconductors
  • Thin-film circuits
  • Power resistors

Aluminum Nitride (AlN) Ceramic Substrate Packing

Aluminum Nitride (AlN) Ceramic Substrate is carefully packaged with adhesive-free surface protection tape and cardboard boxes to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.

Aluminum Nitride (AlN) Ceramic Substrate Packing

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