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Aluminum Nitride (AlN) Products
Aluminum Nitride (AlN) Ceramic Substrate
New product
Aluminum Nitride (AlN) Ceramic Substrate serves as an excellent heat dissipation and encapsulation material for next-generation LED lighting, large-scale integrated circuits, semiconductor module circuits, and high-power devices. Heeger Materials offers top-quality Aluminum Nitride (AlN) Ceramic Substrate at competitive prices, with customized options for specific requirements.
Please contact us if you need customized services. We will contact you with the price and availability in 24 hours.
Data sheet
| Materials | AlN |
| Size | Customized |
More info
Aluminum Nitride (AlN) Ceramic Substrate possesses outstanding properties, including strong mechanical stress, stable shape, high strength, high thermal conductivity, high insulation resistance, strong bonding, corrosion resistance, and excellent thermal cycling performance, effectively addressing high-temperature and high-power environments.
- High thermal conductivity, up to 5~10 times than that of Alumina (Al2O3).
- Similar coefficient of thermal expansion to that of silicon (Si).
- Good mechanical properties, and flexural strength close to that of Alumina (Al2O3).
- High electrical resistivity and low dielectric loss.
- Good compatibility with the circuit materials, enabling multi-layer wiring for high-density and miniaturized packaging.
- High purity, no toxicity.
Aluminum Nitride (AlN) Ceramic Substrate Properties
Item | Unit | AlN-170 | AlN-190 | |
Density | g/cm3 | 3.3 | 3.3 | |
Melting Point | ℃ | 2500 | 2500 | |
Surface roughness | μm | 0.2～0.6 | 0.3~0.5 | |
Thermal | Thermal Conductivity | 25℃ W/(m.k) | 170-190 | 190-210 |
Coefficient of thermal expansion | 20～300℃ (10-6/℃) | 4.6 | 4.6 | |
Electrical | Dielectric Constant | 1 MHz, 25℃ | 8.56 | 8.56 |
Dielectric Loss | 1 MHz, 25℃ | 4.6×10-4 | 4.6×10-4 | |
Volume resistivity | 20℃.Ω.cm | 1.4×1014 | 1.4×1014 | |
Breakdown Strength | KV/mm | ≥15 | ≥15 | |
Mechanical | Flexural Strength | Mpa | 300-400 | 300-400 |
Elastic Modulus | GPa | 310-320 | 310-320 | |
Warpage | ~/25(length) | ≤2‰ | ≤2‰ | |
Aluminum Nitride (AlN) Ceramic Substrate Specifications
Product | Specification | |
Outer Dimensions (mm) | Thickness (mm) | |
HM-AlN substrate-1 | 22×28 | 0.6 |
HM-AlN substrate-2 | 20×25 | 1 |
HM-AlN substrate-3 | 14×20 | 0.6 |
HM-AlN substrate-4 | 14×14 | 0.4 |
Note | In addition to the above dimensions or thicknesses, customization can be made according to the specific drawings. | |
Aluminum Nitride (AlN) Ceramic Substrate Processing
- Mechanical Processing
- Laser Processing
- Polishing / Lapping (Ra: 0.02-0.05 μm)
- Metalization
- Other processing methods can be customized according to specific requirements.
Aluminum Nitride (AlN) Ceramic Substrate Applications
- Heat dissipation substrates
- LED packages
- Semiconductors
- Thin-film circuits
- Power resistors
Aluminum Nitride (AlN) Ceramic Substrate Packing
Aluminum Nitride (AlN) Ceramic Substrate is carefully packaged with adhesive-free surface protection tape and cardboard boxes to minimize damage during storage and transportation and to preserve the quality of our products in their original condition.
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