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M-Plane Aluminum Nitride Single Crystal Substrate
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M-Plane Aluminum Nitride (AlN) Single Crystal Substrate offers excellent thermal conductivity and electrical insulation, ideal for high-performance applications like UV-LEDs, UV detectors, and 5G electronics. Heeger Materials (HM) provides high-quality M-Plane Aluminum Nitride Single Crystal Substrate with consistent quality for reliable results.
Please contact us if you need customized services. We will contact you with the price and availability in 24 hours.
Data sheet
| Thick | 400±50 μm |
| Shape | Square |
| Density | 3.23 g/cc |
| Melting Piont | 2750 ℃ (under 10-100 bar of Nitrogen) |
More info
M-Plane Aluminum Nitride (AlN) Single Crystal Substrate provides exceptional thermal conductivity, electrical insulation, and mechanical properties, making it ideal for advanced applications in UVC-LED chips, ultraviolet detectors, ultraviolet lasers, and high-power, high-temperature, and high-frequency electronic devices. Known for its unique M-plane orientation, it ensures optimal performance in semiconductor and optoelectronic applications. Additionally, Heeger Materials (HM) also offers high-quality Aluminum Nitride Single Crystal Substrates in various sizes, such as 10x10mm, 10mm, 15mm, 20mm, 25.4mm, 30mm, and 50.8mm, or can customize non-standard sizes ranging from 5mm to 50.8mm to meet specific customer needs. Furthermore, we offer Aluminum Nitride (AlN) Ceramic Substrate to fulfill particular requirements.
M-Plane Aluminum Nitride Single Crystal Substrate Specifications
Specification Parameter | Value | ||
Dimension (mm) | 10mm-20mm | ||
Thickness (µm) | 400 ± 50 | ||
Crystal Type | 2H | ||
Crystal Orientation | {0001} ± 0.5˚ | ||
Surface Finish | Chemical Polishing (Double-side customizable) | ||
Surface Roughness | Al Face: ≤0.5 nm N Face (Backside): ≤1.2 μm | ||
Shape | Square | ||
Quality Grade | S Grade (Super) | P Grade (Production) | R Grade (Research) |
HRXRD FWHM@(0002)(arcsec) | ≤ 150 | ≤ 300 | ≤ 500 |
HRXRD FWHM@(10-12)(arcsec) | ≤ 100 | ≤ 200 | ≤ 400 |
Absorption Coefficient@265nm (cm⁻¹) | ≤ 50 | ≤ 70 | ≤ 100 |
Edge Exclusion Area (mm) | 1 | 1 | 1 |
Scratches | None | None | None |
Chipping | None | None | ≤ 3 Cumulative ≤ 1.0mm |
Effective Area | ≥ 90% | ||
Total Thickness Variation (μm) | ≤ 30 | ||
Warpage (μm) | ≤ 30 | ||
Curvature (μm) | ≤ 30 | ||
Crack | None, Naked Eye, Strong Light | ||
Surface Contamination | None, Naked Eye, Scattered Light | ||
Packaging | Single Wafer Round Box | ||
M-Plane AlN Single Crystal Substrate Partial Characterization Results
1. UV Absorption Coefficient Spectrum: 2. 10-10 HRXRD Rocking Curve
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3. Chemically Polished Al Polar Surface AFM Morphology:
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Aluminum Nitride Crystal Structure
M-Plane AlN Single Crystal Substrate Main Impurity Content
Impurity Element | C | O | Si | B | Na | W | P | S | Ti | Fe |
PPMW | 27 | 90 | 5.4 | 0.92 | 0.23 | <0.1 | <0.1 | <0.5 | 0.46 | <0.5 |
Aluminum Nitride Material Physical Property Parameters
Common Parameters | Parameter Values |
Crystal Structure | Wurtzite - type |
Lattice Constant (Å) | a = 3.112, c = 4.982 |
Conduction Band Type | Direct Bandgap |
Crystal Density (g/cm³) | 3.23 |
Knoop Hardness of the Surface | 800 |
Melting Point (°C) | 2750 (under 10-100 bar of nitrogen) |
Thermal Conductivity (W/m·K) | 320 |
Bandgap (eV) | 6.28 |
Electron Mobility (V·s/cm²) | 1100 |
Breakdown Field Strength (MV/cm) | 11.7 |
Sound Velocity (m/s) | 11,300 |
M-Plane AIN Single Crystal Substrate Applications
- High-Performance Optoelectronics: M-Plane AIN substrates are perfect for optoelectronic devices like UV-LEDs and UV lasers, as accurate crystal orientation and effective heat management are essential for durability and reliability over time.
- High-Temperature and High-Power Devices: The excellent thermal conductivity of M-Plane AIN renders it ideal for high-power, high-temperature uses, such as power amplifiers, RF devices, and other rigorous electronics that need effective heat management.
- Advanced Semiconductor Uses: M-Plane orientation is especially advantageous for advanced semiconductor devices, providing improved material characteristics for developing strong, high-performance components utilized in leading-edge technologies such as 5G and more.
- UV Sensing and Detection: Thanks to its distinct characteristics, M-Plane AIN is commonly utilized in UV detectors, allowing for sensitive and accurate detection in fields like environmental monitoring, medical diagnostics, and industrial sensing.
- Aerospace and Military Electronics: M-Plane AIN substrates are crucial for the aerospace and defense sectors, as components must withstand harsh conditions. Due to their excellent thermal stability and resistance to radiation, they are perfect for applications in high-reliability systems.
Where to Buy M-Plane AIN Single Crystal Substrate in Bulk?
Heeger Materials Inc., a professional supplier and manufacturer of high-quality Aluminum Nitride (AlN) products, including M-Plane Aluminum Nitride Single Crystal Substrate, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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