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Aluminum Nitride (AlN) Film Template...
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Aluminum Nitride (AlN) Film Template on Silicon offers excellent thermal conductivity and is ideal for UVC-LEDs, UV detectors, and semiconductors. Available in 4" and 6" sizes, it provides a stable platform for high-quality Aluminum Nitride films. Heeger Materials (HM) ensures consistent quality for optimal performance.
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Diameter | 4 inch, 6 inch, 8 inch |
Thick | 200/400/500/600/800 or customized |
Density | 3.23 g/cc |
Melting Piont | 2750 ℃ (under 10-100 bar of Nitrogen) |
Aluminum Nitride (AlN) Film Template on Silicon provides a high-quality substrate with exceptional thermal conductivity and mechanical strength, making it perfect for advanced applications in optoelectronics and power electronics. Available in 4" and 6" sizes, this template serves as a reliable platform for growing Aluminum Nitride films, offering excellent performance for devices like UVC-LEDs, UV detectors, and semiconductor components. Its superior heat dissipation and material properties ensure enhanced efficiency and longevity in high-performance applications. Heeger Materials (HM) guarantees consistent quality, delivering reliable solutions for your specialized needs. Furthermore, we offer Aluminum Nitride (AlN) Ceramic Substrate to fulfill particular requirements.
Specification Parameters | Parameter Values | ||
Substrate | Silicon single crystal wafer (100) plane | ||
Doping Type | N/P | ||
Resistivity (Ω) | >5000 | ||
AIN Epitaxial Layer Crystal Structure | Wurtzite | ||
Diameter (inch) | 4 | 6 | 8 |
Substrate Thickness (μm) | 525 ± 20 | 625 ± 15 | 725 ± 15 |
AIN Epitaxial Layer Thickness (nm) | 200/400/500/600/800 or customized, the parameters in this table are based on 500nm | ||
Crystal Orientation | C-axis [0001] ±/- 0.2° | ||
Effective Area | ≥95% | ||
Cracks | None | ||
XRD Powder FWHM @(0002) | ≤0.2° | ||
HRXRD FWHM @(0002) | ≤1.55° | ||
Surface Roughness [5×5μm] (nm) | ≤2.0 | ||
Total Thickness Variation (μm) | ≤10 | ≤5 | ≤4 |
Warpage (μm) | ≤25 | ≤40 | ≤40 |
Bending (μm) | ≤25 | ≤40 | ≤40 |
Packaging | Single wafer cassette/Multiple wafer cassette | ||
Note | The above parameter values may vary slightly depending on the actual testing equipment or software used |
1. Powder XRD and Full Width at Half Maximum (FWHM):
2. HDXRD and Full Width at Half Maximum (FWHM):
3. Silicon-Based Aluminum Nitride Template AFM Morphology:
Common Parameters | Parameter Values |
Crystal Structure | Wurtzite - type |
Lattice Constant (Å) | a=3.112, c=4.982 |
Conduction Band Type | Direct Bandgap |
Crystal Density (g/cm³) | 3.23 |
Knoop Hardness of the Surface | 800 |
Melting Point (°C) | 2750 (under 10 - 100 bar of nitrogen) |
Thermal Conductivity (W/m·K) | 320 |
Bandgap (eV) | 6.28 |
Electron Mobility (V·s/cm²) | 1100 |
Breakdown Field Strength (MV/cm) | 11.7 |
Sound Velocity (m/s) | 11300 |
Heeger Materials Inc., a professional supplier and manufacturer of high-quality Aluminum Nitride (AlN) products, including Aluminum Nitride Film Template on Silicon, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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