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Aluminum Nitride (AlN) Film Template...
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Aluminum Nitride (AlN) Film Template on Sapphire offers excellent thermal conductivity, ideal for UVC-LEDs, UV lasers, and semiconductor applications. Available in 2", 4", and 6" sizes, it provides a stable platform for high-quality Aluminum Nitride films. Heeger Materials (HM) ensures consistent quality for optimal performance.
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Diameter | 2 inch, 4 inch, 6 inch |
Thick | 200/400/600/800/1000 nm or customized |
Density | 3.23 g/cc |
Melting Piont | 2750 ℃ (under 10-100 bar of Nitrogen) |
Aluminum Nitride (AlN) Film Template on Sapphire offers high-quality templates with Aluminum Nitride (AlN) films ranging from 200nm to 1000nm in thickness, available in standard sizes from 2" to 6". This template is ideal for use in advanced applications such as UVC-LEDs, UV detectors, and 5G communication devices. In addition to standard sizes, we also provide customized AlN templates with film thicknesses from 50nm to 5000nm, designed to meet specific customer requirements. As a reliable substrate material, it ensures superior performance and stability for a variety of high-tech applications. Heeger Materials (HM) provides consistently high-quality Aluminum Nitride Film Templates on Sapphire, delivering optimal solutions for your specialized needs. Furthermore, we offer Aluminum Nitride (AlN) Ceramic Substrate to fulfill particular requirements.
Specification Parameters | Parameter Values | ||
Substrate | Sapphire C-plane | ||
AIN Epitaxial Layer Crystal Structure | Wurtzite | ||
Diameter (inch) | 2 | 4 | 6 |
Substrate Thickness (μm) | 430 ± 15 | 650 ± 20 | 1300 ± 20 |
AIN Epitaxial Layer Thickness (nm) | 200/400/600/800/1000 or customized, the parameters in this table are based on 200nm | ||
Crystal Orientation | C-axis [0001] ±/- 0.2° | ||
Effective Area | ≥95% | ||
Cracks | None | ||
Back Surface Roughness (μm) | RMS<1.2 | ||
HRXRD FWHM @(0002) (arcsec) | <100 | ||
HRXRD FWHM @(10-12) (arcsec) | <350 | ||
Surface Roughness [5×5μm] (nm) | Ra≤2 | ||
Total Thickness Variation (μm) | ≤10 | ≤20 | ≤20 |
Warpage (μm) | ≤20 | ≤40 | ≤60 |
Bending (μm) | ≤20 | ≤40 | ≤60 |
Packaging | Single wafer cassette/Multiple wafer cassette | ||
Note | The above parameters may vary slightly depending on the actual testing equipment or software used |
1. 002 HRXRD Full Width At Half Maximum (FWHM): 2. 102 HRXRD Full Width At Half Maximum (FWHM):
3. Aluminum Nitride Film Template On Sapphire AFM Morphology:
Common Parameters | Parameter Values |
Crystal Structure | Wurtzite - type Structure |
Lattice Constant (Å) | a = 3.112, c = 4.982 |
Conduction Band Type | Direct Bandgap |
Crystal Density (g/cm³) | 3.23 |
Knoop Hardness of the Surface | 800 |
Melting Point (°C) | 2750 (under 10 - 100 bar nitrogen) |
Thermal Conductivity (W/m·K) | 320 |
Bandgap (eV) | 6.28 |
Electron Mobility (V·s/cm²) | 1100 |
Breakdown Field Strength (MV/cm) | 11.7 |
Sound Velocity (m/s) | 11,300 |
Heeger Materials Inc., a professional supplier and manufacturer of high-quality Aluminum Nitride (AlN) products, including Aluminum Nitride Film Template on Sapphire, leverages extensive expertise in supply and export to offer competitive prices. We provide customized solutions to meet specific requirements, ensuring exceptional quality and customer satisfaction.
Heeger Materials Inc. was established in 2016 in Colorado, USA. We specialize in premium-grade metals, alloys, ceramics, powders, and other materials catering to research, development, and large-scale industrial production in scientific and industrial sectors.
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